Invention Application
- Patent Title: PEAK-BASED ENDPOINTING FOR CHEMICAL MECHANICAL POLISHING
- Patent Title (中): 基于峰值的化学机械抛光的终点
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Application No.: US14088933Application Date: 2013-11-25
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Publication No.: US20140080232A1Publication Date: 2014-03-20
- Inventor: Dominic J. Benvegnu , Boguslaw A. Swedek , David J. Lischka
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/66
- IPC: H01L21/66 ; B24B37/013
Abstract:
A polishing system receives one or more target parameters for a selected peak in a spectrum of light, polishes a substrate, measures a current spectrum of light reflected from the substrate while the substrate is being polished, identifies the selected peak in the current spectrum, measures one or more current parameters of the selected peak in the current spectrum, compares the current parameters of the selected peak to the target parameters, and ceases to polish the substrate when the current parameters and the target parameters have a pre defined relationship.
Public/Granted literature
- US09564377B2 Peak-based endpointing for chemical mechanical polishing Public/Granted day:2017-02-07
Information query
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