- 专利标题： METHODS OF CONTAINING DEFECTS FOR NON-SILICON DEVICE ENGINEERING
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申请号： US13631417申请日： 2012-09-28
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公开(公告)号： US20140091361A1公开(公告)日： 2014-04-03
- 发明人: Niti Goel , Ravi Pillarisetty , Niloy Mukherjee , Robert S. Chau , Willy Rachmady , Matthew V. Metz , Van H. Le , Jack T. Kavalieros , Marko Radosavljevic , Benjamin Chu-Kung , Gilbert Dewey , Seung Hoon Sung
- 申请人： Niti Goel , Ravi Pillarisetty , Niloy Mukherjee , Robert S. Chau , Willy Rachmady , Matthew V. Metz , Van H. Le , Jack T. Kavalieros , Marko Radosavljevic , Benjamin Chu-Kung , Gilbert Dewey , Seung Hoon Sung
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L21/8238
摘要：
An apparatus including a device including a channel material having a first lattice structure on a well of a well material having a matched lattice structure in a buffer material having a second lattice structure that is different than the first lattice structure. A method including forming a trench in a buffer material; forming an n-type well material in the trench, the n-type well material having a lattice structure that is different than a lattice structure of the buffer material; and forming an n-type transistor. A system including a computer including a processor including complimentary metal oxide semiconductor circuitry including an n-type transistor including a channel material, the channel material having a first lattice structure on a well disposed in a buffer material having a second lattice structure that is different than the first lattice structure, the n-type transistor coupled to a p-type transistor.
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