发明申请
- 专利标题： TRANSISTOR FORMATION USING COLD WELDING
- 专利标题（中）： 使用冷焊的晶体管形成
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申请号： US13660497申请日： 2012-10-25
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公开(公告)号： US20140091370A1公开(公告)日： 2014-04-03
- 发明人: CHENG-WEI CHENG , SHU-JEN HAN , MASAHARU KOBAYASHI , KO-TAO LEE , DEVENDRA K. SADANA , KUEN-TING SHIU
- 申请人： INTERNATIONAL BUSINESS MACHINES CORP
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L23/48
摘要：
A device and method for fabrication includes providing a first substrate assembly including a first substrate and a first metal layer formed on the first substrate and a second substrate assembly including a second substrate and a second metal layer formed on the second substrate. The first metal layer is joined to the second metal layer using a cold welding process wherein one of the first substrate and the second substrate includes a semiconductor channel layer for forming a transistor device.
公开/授权文献
- US08941147B2 Transistor formation using cold welding 公开/授权日：2015-01-27
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