Invention Application
US20140091846A1 INTEGRATED COMPARATOR WITH HYSTERESIS, IN PARTICULAR PRODUCED IN AN FD SOI TECHNOLOGY 审中-公开
具有HYSTERESIS的集成比较器,特别是在FD SOI技术中生产

  • Patent Title: INTEGRATED COMPARATOR WITH HYSTERESIS, IN PARTICULAR PRODUCED IN AN FD SOI TECHNOLOGY
  • Patent Title (中): 具有HYSTERESIS的集成比较器,特别是在FD SOI技术中生产
  • Application No.: US14040781
    Application Date: 2013-09-30
  • Publication No.: US20140091846A1
    Publication Date: 2014-04-03
  • Inventor: Francois Agut
  • Applicant: STMicroelectronics SA
  • Applicant Address: FR Montrouge
  • Assignee: STMICROELECTRONICS SA
  • Current Assignee: STMICROELECTRONICS SA
  • Current Assignee Address: FR Montrouge
  • Priority: FR1259273 20121001
  • Main IPC: H03K3/3565
  • IPC: H03K3/3565
INTEGRATED COMPARATOR WITH HYSTERESIS, IN PARTICULAR PRODUCED IN AN FD SOI TECHNOLOGY
Abstract:
A comparator circuit includes an input differential amplifier circuit generating an output signal and an inverting output circuit generating a complemented output signal. The differential amplifier circuit is formed of a differential pair of input transistors and a pair of diode connected load transistors. The comparator circuit is integrated in a silicon on insulator type structure. A hysteresis-creating circuit is formed by coupling one or more of the output signal and complemented output signal to a substrate region (in the silicon on insulator type structure) associated with one or more of the differential pair of input transistors and pair of diode connected load transistors. The differential amplifier circuit may further include auxiliary transistors coupled to the diode connected load transistors and the hysteresis-creating circuit may further couple one or more of the output signal and complemented output signal to the substrate region associated with the auxiliary transistor.
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