Invention Application
- Patent Title: LOCAL VOLTAGE CONTROL FOR ISOLATED TRANSISTOR ARRAYS
- Patent Title (中): 用于隔离晶体管阵列的本地电压控制
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Application No.: US13889583Application Date: 2013-05-08
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Publication No.: US20140091858A1Publication Date: 2014-04-03
- Inventor: Nathaniel Peachey , Ralph Christopher Nieri
- Applicant: RF MICRO DEVICES, INC.
- Applicant Address: US NC Greensboro
- Assignee: RF Micro Devices, Inc.
- Current Assignee: RF Micro Devices, Inc.
- Current Assignee Address: US NC Greensboro
- Main IPC: G05F3/16
- IPC: G05F3/16

Abstract:
Self-biasing transistor switching circuitry includes a main transistor, a biasing transistor, a first capacitor, and a second capacitor. The body of the main transistor is isolated from the gate, the drain, and the source of the main transistor by an insulating layer. The first capacitor is coupled between the source and the gate of the main transistor. The second capacitor is coupled between the source and the body of the main transistor. The body and the drain of the main transistor are coupled together. The gate and the drain of the biasing transistor are coupled to the gate of the main transistor. The drain of the biasing transistor is coupled to the drain of the main transistor. The self-biasing transistor switching circuitry is adapted to receive an oscillating signal at the drain of the main transistor, and use the oscillating signal to appropriately bias the main transistor.
Public/Granted literature
- US08829981B2 Local voltage control for isolated transistor arrays Public/Granted day:2014-09-09
Information query
IPC分类: