Invention Application
- Patent Title: COMPENSATION FOR VARIATIONS IN A CAPACITIVE SENSE MATRIX
- Patent Title (中): 电容式感应矩阵中变量的补偿
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Application No.: US13629877Application Date: 2012-09-28
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Publication No.: US20140092050A1Publication Date: 2014-04-03
- Inventor: Sze-Kwang Tan , Yannick Guedon , Dianbo Guo
- Applicant: Sze-Kwang Tan , Yannick Guedon , Dianbo Guo
- Applicant Address: SG Singapore
- Assignee: STMicroelectronics Asia Pacific Pte. Ltd.
- Current Assignee: STMicroelectronics Asia Pacific Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: G06F3/044
- IPC: G06F3/044

Abstract:
A readout device for a capacitive sense matrix includes a computer readable storage medium configured to store capacitance data. The capacitance data represents capacitance values of the capacitive sense matrix. The readout device also includes a readout circuit configured to receive a signal from the capacitive sense matrix, the readout circuit being configured based upon the capacitance data. Also described are a readout method and a method of compensating for variations in capacitance.
Public/Granted literature
- US09223448B2 Compensation for variations in a capacitive sense matrix Public/Granted day:2015-12-29
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