SEMICONDUCTOR DEVICE WITH SELF-ALIGNED INTERCONNECTS

Invention Application

US20140094009A1 SEMICONDUCTOR DEVICE WITH SELF-ALIGNED INTERCONNECTS 有权

Title translation: 具有自对准互连的半导体器件

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Patent Title: SEMICONDUCTOR DEVICE WITH SELF-ALIGNED INTERCONNECTS
Patent Title (中): 具有自对准互连的半导体器件
Application No.: US14106100

Application Date: 2013-12-13
Publication No.: US20140094009A1

Publication Date: 2014-04-03
Inventor: Yue-Der Chih , Jam-Wem Lee , Cheng-Hsiung Kuo , Tsung-Che Tsai , Ming-Hsiang Song , Hung-Cheng Sung , Hung Cho Wang
Applicant: Yue-Der Chih , Jam-Wem Lee , Cheng-Hsiung Kuo , Tsung-Che Tsai , Ming-Hsiang Song , Hung-Cheng Sung , Hung Cho Wang
Applicant Address: TW Hsinchu
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Current Assignee Address: TW Hsinchu
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L21/8234

SEMICONDUCTOR DEVICE WITH SELF-ALIGNED INTERCONNECTS

Abstract:

A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate including a metal oxide device. The metal oxide device includes first and second doped regions disposed within the substrate and interfacing in a channel region. The first and second doped regions are doped with a first type dopant. The first doped region has a different concentration of dopant than the second doped region. The metal oxide device further includes a gate structure traversing the channel region and the interface of the first and second doped regions and separating source and drain regions. The source region is formed within the first doped region and the drain region is formed within the second doped region. The source and drain regions are doped with a second type dopant. The second type dopant is opposite of the first type dopant.

Abstract(Chinese):

公开了一种用于制造半导体器件的半导体器件和方法。示例性的半导体器件包括包括金属氧化物器件的衬底。金属氧化物器件包括设置在衬底内的第一和第二掺杂区域，并且在沟道区域中连接。第一和第二掺杂区掺杂有第一类掺杂剂。第一掺杂区具有与第二掺杂区不同的掺杂浓度。金属氧化物器件还包括穿过沟道区域的栅极结构以及第一和第二掺杂区域的界面以及分离源极和漏极区域。源极区域形成在第一掺杂区域内，并且漏极区域形成在第二掺杂区域内。源区和漏区掺杂有第二类掺杂剂。第二种掺杂剂与第一种掺杂剂相反。

Public/Granted literature

US08906767B2 Semiconductor device with self-aligned interconnects Public/Granted day:2014-12-09

Information query

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS