发明申请
- 专利标题： SEMICONDUCTOR DEVICE WITH SELF-ALIGNED INTERCONNECTS
- 专利标题（中）： 具有自对准互连的半导体器件
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申请号： US14106100申请日： 2013-12-13
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公开(公告)号： US20140094009A1公开(公告)日： 2014-04-03
- 发明人: Yue-Der Chih , Jam-Wem Lee , Cheng-Hsiung Kuo , Tsung-Che Tsai , Ming-Hsiang Song , Hung-Cheng Sung , Hung Cho Wang
- 申请人： Yue-Der Chih , Jam-Wem Lee , Cheng-Hsiung Kuo , Tsung-Che Tsai , Ming-Hsiang Song , Hung-Cheng Sung , Hung Cho Wang
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/8234
摘要：
A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate including a metal oxide device. The metal oxide device includes first and second doped regions disposed within the substrate and interfacing in a channel region. The first and second doped regions are doped with a first type dopant. The first doped region has a different concentration of dopant than the second doped region. The metal oxide device further includes a gate structure traversing the channel region and the interface of the first and second doped regions and separating source and drain regions. The source region is formed within the first doped region and the drain region is formed within the second doped region. The source and drain regions are doped with a second type dopant. The second type dopant is opposite of the first type dopant.
公开/授权文献
- US08906767B2 Semiconductor device with self-aligned interconnects 公开/授权日：2014-12-09
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