Invention Application
- Patent Title: CAPACITOR AND CONTACT STRUCTURES, AND FORMATION PROCESSES THEREOF
- Patent Title (中): 电容器和接触结构及其形成过程
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Application No.: US13648504Application Date: 2012-10-10
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Publication No.: US20140098459A1Publication Date: 2014-04-10
- Inventor: Ki Young LEE , Sanggil BAE , Jae Ho JOUNG
- Applicant: GLOBALFOUNDRIES, INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee Address: KY Grand Cayman
- Main IPC: H01G4/228
- IPC: H01G4/228

Abstract:
Capacitor and contact structures are provided, as well as methods for forming the capacitor and contact structures. The methods include, for instance, providing a layer of conductive material above a conductive structure and above a lower electrode of a capacitor; etching the layer of conductive material to define a conductive material hard mask and an upper electrode of the capacitor, the conductive material hard mask being disposed at least partially above the conductive structure; and forming a first conductive contact structure and a second conductive contact structure, the first conductive contact structure extending through an opening in the conductive material hard mask and conductively contacting the conductive structure, and the second conductive contact structure conductively contacting one of the lower electrode of the capacitor, or the upper electrode of the capacitor.
Public/Granted literature
- US09178009B2 Methods of forming a capacitor and contact structures Public/Granted day:2015-11-03
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