公开(公告)号：US20150364540A1

公开(公告)日：2015-12-17

申请号：US14837288

申请日：2015-08-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ki Young LEE ,  Sanggil BAE ,  Jae Ho JOUNG

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/60 ,  H01L27/10805

Abstract: Capacitor and contact structures are provided, as well as methods for forming the capacitor and contact structures. The methods include, for instance, providing a layer of conductive material above a conductive structure and above a lower electrode of a capacitor; etching the layer of conductive material to define a conductive material hard mask and an upper electrode of the capacitor, the conductive material hard mask being disposed at least partially above the conductive structure; and forming a first conductive contact structure and a second conductive contact structure, the first conductive contact structure extending through an opening in the conductive material hard mask and conductively contacting the conductive structure, and the second conductive contact structure conductively contacting one of the lower electrode of the capacitor, or the upper electrode of the capacitor.

Abstract translation: 提供了电容器和接触结构，以及形成电容器和接触结构的方法。 所述方法包括例如在导电结构之上和电容器的下电极之上提供导电材料层; 蚀刻导电材料层以限定导电材料硬掩模和电容器的上电极，导电材料硬掩模至少部分地设置在导电结构之上; 以及形成第一导电接触结构和第二导电接触结构，所述第一导电接触结构延伸穿过所述导电材料硬掩模中的开口并导电地接触所述导电结构，并且所述第二导电接触结构导电地接触所述导电接触结构的下电极之一 电容器或电容器的上电极。

公开(公告)号：US20170250243A1

公开(公告)日：2017-08-31

申请号：US15459450

申请日：2017-03-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ki Young LEE ,  Woong Lae CHO ,  Jae Ho JOUNG

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/60 ,  H01L27/10805 ,  H01L28/00 ,  H01L28/75 ,  H01L28/92

Abstract: A capacitor includes a bottom electrode and a top electrode positioned above the bottom electrode. The top electrode and the bottom electrode are conductively coupled to one another. A middle electrode is positioned between the bottom electrode and the top electrode. A lower dielectric layer is positioned between the bottom electrode and the middle electrode. An upper dielectric layer is positioned between the middle electrode and the top electrode. A first contact is conductively coupled to the top electrode. A second contact is conductively coupled to the middle electrode.

公开(公告)号：US20140098459A1

公开(公告)日：2014-04-10

申请号：US13648504

申请日：2012-10-10

Applicant: GLOBALFOUNDRIES, INC.

Inventor： Ki Young LEE ,  Sanggil BAE ,  Jae Ho JOUNG

IPC: H01G4/228

CPC classification number: H01L28/60 ,  H01L27/10805

Abstract: Capacitor and contact structures are provided, as well as methods for forming the capacitor and contact structures. The methods include, for instance, providing a layer of conductive material above a conductive structure and above a lower electrode of a capacitor; etching the layer of conductive material to define a conductive material hard mask and an upper electrode of the capacitor, the conductive material hard mask being disposed at least partially above the conductive structure; and forming a first conductive contact structure and a second conductive contact structure, the first conductive contact structure extending through an opening in the conductive material hard mask and conductively contacting the conductive structure, and the second conductive contact structure conductively contacting one of the lower electrode of the capacitor, or the upper electrode of the capacitor.

Abstract translation: 提供了电容器和接触结构，以及形成电容器和接触结构的方法。 所述方法包括例如在导电结构之上和电容器的下电极之上提供导电材料层; 蚀刻导电材料层以限定导电材料硬掩模和电容器的上电极，导电材料硬掩模至少部分地设置在导电结构之上; 以及形成第一导电接触结构和第二导电接触结构，所述第一导电接触结构延伸穿过所述导电材料硬掩模中的开口并导电地接触所述导电结构，并且所述第二导电接触结构导电地接触所述导电接触结构的下电极之一 电容器或电容器的上电极。