发明申请
- 专利标题： SEMICONDUCTOR WAFER WITH ASSISTING DICING STRUCTURE AND DICING METHOD THEREOF
- 专利标题（中）： 具有辅助结构的半导体晶片及其定义方法
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申请号： US14132192申请日： 2013-12-18
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公开(公告)号： US20140106544A1公开(公告)日： 2014-04-17
- 发明人: Hsien-Wei CHEN , Shih-Hsun HSU
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/78
- IPC分类号： H01L21/78
摘要：
A semiconductor wafer with an assisting dicing structure. The wafer comprises a substrate having a front surface and a rear surface. The front surface of the substrate comprises at least two device regions separated by at least one dicing lane. The rear surface of the substrate comprises at least one pre-dicing trench formed therein and substantially aligned with the dicing lane. A method for dicing a semiconductor wafer is also disclosed.
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