发明申请
- 专利标题： SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体晶体管及半导体器件制造方法
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申请号： US14030662申请日： 2013-09-18
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公开(公告)号： US20140110712A1公开(公告)日： 2014-04-24
- 发明人: Shoko Saito , Tomoyuki Okada , Kanji Takeuchi , MITSUFUMI NAOE , Masahiko Minemura , Yukihiro Sato , Yoshito Konno , Yasuhiko Inada , Tomoaki Inaoka , Naoya SASHIDA
- 申请人： FUJITSU SEMICONDUCTOR LIMITED
- 申请人地址： JP Yokohama
- 专利权人： FUJITSU SEMICONDUCTOR LIMITED
- 当前专利权人： FUJITSU SEMICONDUCTOR LIMITED
- 当前专利权人地址： JP Yokohama
- 优先权： JP2012-232799 20121022
- 主分类号： H01L21/66
- IPC分类号： H01L21/66 ; H01L21/308
摘要：
A semiconductor wafer including patterns transferred to a plurality of shot regions of the semiconductor wafer respectively, a plurality of chip regions being formed in the plurality of shot regions respectively, a plurality of first dummy patterns being formed respectively in a first chip region of the plurality of chip regions of each of the plurality of shot regions, the plurality of first dummy patterns being arranged repeatedly in a first manner, a plurality of second dummy patterns being formed respectively in a second chip region of the plurality of chip regions of each of the plurality of shot regions, the plurality of second dummy patterns being arranged repeatedly in a second manner different from the first manner.
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