公开(公告)号：US09508559B2

公开(公告)日：2016-11-29

申请号：US14030662

申请日：2013-09-18

申请人： FUJITSU SEMICONDUCTOR LIMITED

发明人： Shoko Saito ,  Tomoyuki Okada ,  Kanji Takeuchi ,  Mitsufumi Naoe ,  Masahiko Minemura ,  Yukihiro Sato ,  Yoshito Konno ,  Yasuhiko Inada ,  Tomoaki Inaoka ,  Naoya Sashida

IPC分类号： G01R31/28 ,  H01L29/00 ,  H01L21/308 ,  H01L21/3213 ,  H01L23/544 ,  H01L23/522 ,  H01L23/00

CPC分类号： H01L21/308 ,  H01L21/32139 ,  H01L23/522 ,  H01L23/544 ,  H01L24/05 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2224/02166 ,  H01L2224/05556

摘要： A semiconductor wafer including patterns transferred to a plurality of shot regions of the semiconductor wafer respectively, a plurality of chip regions being formed in the plurality of shot regions respectively, a plurality of first dummy patterns being formed respectively in a first chip region of the plurality of chip regions of each of the plurality of shot regions, the plurality of first dummy patterns being arranged repeatedly in a first manner, a plurality of second dummy patterns being formed respectively in a second chip region of the plurality of chip regions of each of the plurality of shot regions, the plurality of second dummy patterns being arranged repeatedly in a second manner different from the first manner.

摘要翻译： 一种半导体晶片，包括分别转移到半导体晶片的多个照射区域的图案，多个芯片区域分别形成在多个照射区域中，多个第一虚设图案分别形成在多个第一芯片区域中 所述多个第一虚设图案以第一方式重复布置，多个第二虚设图案分别形成在所述多个照射区域中的每一个的多个芯片区域的第二芯片区域中 多个拍摄区域，多个第二虚拟图案以与第一方式不同的第二方式重复布置。

公开(公告)号：US20140110712A1

公开(公告)日：2014-04-24

申请号：US14030662

申请日：2013-09-18

申请人： FUJITSU SEMICONDUCTOR LIMITED

发明人： Shoko Saito ,  Tomoyuki Okada ,  Kanji Takeuchi ,  MITSUFUMI NAOE ,  Masahiko Minemura ,  Yukihiro Sato ,  Yoshito Konno ,  Yasuhiko Inada ,  Tomoaki Inaoka ,  Naoya SASHIDA

IPC分类号： H01L21/66 ,  H01L21/308

CPC分类号： H01L21/308 ,  H01L21/32139 ,  H01L23/522 ,  H01L23/544 ,  H01L24/05 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2224/02166 ,  H01L2224/05556

摘要： A semiconductor wafer including patterns transferred to a plurality of shot regions of the semiconductor wafer respectively, a plurality of chip regions being formed in the plurality of shot regions respectively, a plurality of first dummy patterns being formed respectively in a first chip region of the plurality of chip regions of each of the plurality of shot regions, the plurality of first dummy patterns being arranged repeatedly in a first manner, a plurality of second dummy patterns being formed respectively in a second chip region of the plurality of chip regions of each of the plurality of shot regions, the plurality of second dummy patterns being arranged repeatedly in a second manner different from the first manner.

摘要翻译： 一种半导体晶片，包括分别转移到半导体晶片的多个照射区域的图案，多个芯片区域分别形成在多个照射区域中，多个第一虚设图案分别形成在多个第一芯片区域中 所述多个第一虚设图案以第一方式重复布置，多个第二虚设图案分别形成在所述多个照射区域中的每一个的多个芯片区域的第二芯片区域中 多个拍摄区域，多个第二虚拟图案以与第一方式不同的第二方式重复布置。