发明申请
US20140120678A1 Methods for Selective and Conformal Epitaxy of Highly Doped Si-containing Materials for Three Dimensional Structures
审中-公开
用于三维结构的高掺杂含Si材料的选择性和保形外延的方法
- 专利标题： Methods for Selective and Conformal Epitaxy of Highly Doped Si-containing Materials for Three Dimensional Structures
- 专利标题（中）： 用于三维结构的高掺杂含Si材料的选择性和保形外延的方法
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申请号： US14063118申请日： 2013-10-25
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公开(公告)号： US20140120678A1公开(公告)日： 2014-05-01
- 发明人: Manabu Shinriki , Paul Brabant , Keith Chung, JR.
- 申请人： Manabu Shinriki , Paul Brabant , Keith Chung, JR.
- 申请人地址： US NJ Basking Ridge
- 专利权人： MATHESON TRI-GAS
- 当前专利权人： MATHESON TRI-GAS
- 当前专利权人地址： US NJ Basking Ridge
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
The present invention addresses the key challenges in FinFET fabrication, that is, the fabrications of thin, uniform fins and also reducing the source/drain series resistance. More particularly, this application relates to FinFET fabrication techniques utilizing tetrasilane to enable conformal deposition with high doping using phosphate, arsenic and boron as dopants thereby creating thin fins having uniform thickness (uniformity across devices) as well as smooth, vertical sidewalls, while simultaneously reducing the parasitic series resistance.
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