Invention Application
- Patent Title: LATERAL BIPOLAR JUNCTION TRANSISTOR
- Patent Title (中): 侧向双极晶体管
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Application No.: US14161611Application Date: 2014-01-22
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Publication No.: US20140124871A1Publication Date: 2014-05-08
- Inventor: Ching-Chung Ko , Tung-Hsing Lee
- Applicant: MEDIATEK INC.
- Applicant Address: TW Hsin-Chu
- Assignee: MEDIATEK INC.
- Current Assignee: MEDIATEK INC.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: H01L27/06
- IPC: H01L27/06
Abstract:
A lateral bipolar junction transistor includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; and a collector region surrounding the base region; wherein the portion of the base region under the gate does not under go a threshold voltage implant process.
Public/Granted literature
- US09324705B2 Lateral bipolar junction transistor Public/Granted day:2016-04-26
Information query
IPC分类:
