Invention Application
- Patent Title: SELF-BOOTSTRAPPING FIELD EFFECT DIODE STRUCTURES AND METHODS
- Patent Title (中): 自引导场效应二极管结构和方法
-
Application No.: US14158599Application Date: 2014-01-17
-
Publication No.: US20140131763A1Publication Date: 2014-05-15
- Inventor: Alexei Ankoudinov , Vladimir Rodov
- Applicant: STMicroelectronics N.V.
- Applicant Address: NL Amsterdam
- Assignee: STMicroelectronics N.V.
- Current Assignee: STMicroelectronics N.V.
- Current Assignee Address: NL Amsterdam
- Main IPC: H01L29/74
- IPC: H01L29/74
Abstract:
A two terminal device which can be used for the rectification of the current. Internally it has a regenerative coupling between MOS gates of opposite type and probe regions. This regenerative coupling allows to achieve performance better than that of ideal diode.
Public/Granted literature
- US09029921B2 Self-bootstrapping field effect diode structures and methods Public/Granted day:2015-05-12
Information query
IPC分类:
