公开(公告)号：US20140131763A1

公开(公告)日：2014-05-15

申请号：US14158599

申请日：2014-01-17

Applicant: STMicroelectronics N.V.

Inventor： Alexei Ankoudinov ,  Vladimir Rodov

IPC: H01L29/74

CPC classification number: H01L29/7412 ,  H01L27/0811 ,  H01L27/0814 ,  H01L29/861

Abstract: A two terminal device which can be used for the rectification of the current. Internally it has a regenerative coupling between MOS gates of opposite type and probe regions. This regenerative coupling allows to achieve performance better than that of ideal diode.

Abstract translation: 可用于整流电流的二端装置。 在内部，它具有相反类型的MOS栅极和探针区域之间的再生耦合。 这种再生耦合可以实现比理想二极管更好的性能。