Invention Application
- Patent Title: POWER SEMICONDUCTOR MODULE
- Patent Title (中): 功率半导体模块
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Application No.: US13735125Application Date: 2013-01-07
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Publication No.: US20140138839A1Publication Date: 2014-05-22
- Inventor: Job Ha , Sang Hee Park
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon
- Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee Address: KR Suwon
- Priority: KR10-2012-0131687 20121120
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
Disclosed herein is a power semiconductor module including a substrate having a first metal conductive track formed on one surface thereof, and a base plate made of a metal and solder-joined to the substrate in the first metal conductive track region, wherein a first uneven pattern is formed in the solder junction region formed between the substrate and the base plate.
Information query
IPC分类:
