Abstract:
Disclosed herein is an all-in-one power semiconductor module including a plurality of first semiconductor devices formed on a substrate; a housing molded and formed to include bridges formed across upper portions of the plurality of first semiconductor devices; and a plurality of lead members integrally formed with the housing and electrically connecting the plurality of first semiconductor devices and the substrate.According to the present invention, reliability can be improved by increasing bonding areas and bonding strength of semiconductor devices as well as processibilty can be enhanced and failure is reduced by adjusting a step difference with respect to an arrangement and height of the semiconductor devices. Further, a processing time resulting from an omission of a wire bonding process is reduced.
Abstract:
A semiconductor package includes an organic frame having first and second surfaces opposing each other, having a cavity, and having a wiring structure connecting the first and second surfaces, a connection structure disposed on the first surface of the organic frame and having a first redistribution layer connected to the wiring structure, at least one inorganic interposer having first and second surfaces, and having an interconnection wiring connecting the first and second surfaces of the at least one inorganic interposer to each other, an encapsulant encapsulating at least a portion of the at least one inorganic interposer, an insulating layer disposed on the second surface of the organic frame and the second surface of the at least one inorganic interposer, a second redistribution layer having portions provided as a plurality of pads, and at least one semiconductor chip having connection electrodes respectively connected to the plurality of pads.
Abstract:
Disclosed herein are a package substrate and a semiconductor package using the same. The package substrate includes a circuit area in which a circuit pattern is formed and a dummy area in which a dummy pattern is formed to surround the circuit area.
Abstract:
Disclosed herein is a power semiconductor module including a substrate having a first metal conductive track formed on one surface thereof, and a base plate made of a metal and solder-joined to the substrate in the first metal conductive track region, wherein a first uneven pattern is formed in the solder junction region formed between the substrate and the base plate.
Abstract:
Disclosed herein is an all-in-one power semiconductor module including a plurality of first semiconductor devices formed on a substrate; a housing molded and formed to include bridges formed across upper portions of the plurality of first semiconductor devices; and a plurality of lead members integrally formed with the housing and electrically connecting the plurality of first semiconductor devices and the substrate.According to the present invention, reliability can be improved by increasing bonding areas and bonding strength of semiconductor devices as well as processibilty can be enhanced and failure is reduced by adjusting a step difference with respect to an arrangement and height of the semiconductor devices. Further, a processing time resulting from an omission of a wire bonding process is reduced.
Abstract:
Disclosed herein are a power module package and a method of manufacturing the same. The power module package includes first and second semiconductor devices mounted on sides of first and second lead frames, ends of which are separated from each other, respectively, a support pin corresponding to a mounting position of the first semiconductor device and formed adjacent to a lower portion of the first lead frame, and a molding portion formed to cover portions of the first and second lead frames and the first and second semiconductor devices.
Abstract:
Disclosed herein are a power semiconductor module and a method of manufacturing the same. The power semiconductor module includes: a substrate on which a semiconductor device is mounted; a pin positioned on the substrate and having one side electrically connected to the substrate; and a molding part formed to cover a portion of the pin and the substrate and the semiconductor device, wherein the molding part has a pin insertion opening.