发明申请
US20140141610A1 NON-VOLATILE MEMORY DEVICES INCLUDING VERTICAL NAND STRINGS AND METHODS OF FORMING THE SAME
有权
包括垂直NAND条的非易失性存储器件及其形成方法
- 专利标题： NON-VOLATILE MEMORY DEVICES INCLUDING VERTICAL NAND STRINGS AND METHODS OF FORMING THE SAME
- 专利标题（中）： 包括垂直NAND条的非易失性存储器件及其形成方法
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申请号： US14164712申请日： 2014-01-27
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公开(公告)号： US20140141610A1公开(公告)日： 2014-05-22
- 发明人: Beom-jun Jin , Byung-seo Kim , Sung-Dong Kim
- 申请人： Beom-jun Jin , Byung-seo Kim , Sung-Dong Kim
- 优先权： KR10-2008-0054710 20080611
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; H01L21/28
摘要：
A NAND based non-volatile memory device can include a plurality of memory cells vertically arranged as a NAND string and a plurality of word line plates each electrically connected to a respective gate of the memory cells in the NAND string. A plurality of word line contacts can each be electrically connected to a respective word line plate, where the plurality of word line contacts are aligned to a bit line direction in the device.
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