Invention Application
- Patent Title: LIGHT-TRANSMITTING METAL ELECTRODE AND PROCESS FOR PRODUCTION THEREOF
- Patent Title (中): 光发射金属电极及其制造方法
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Application No.: US14173868Application Date: 2014-02-06
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Publication No.: US20140151326A1Publication Date: 2014-06-05
- Inventor: Eishi Tsutsumi , Tsutomu Nakanishi , Akira Fujimoto , Koji Asakawa
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Priority: JP2008-042894 20080225
- Main IPC: H01B13/00
- IPC: H01B13/00

Abstract:
The present invention provides a light-transmitting metal electrode including a substrate and a metal electrode layer having plural openings. The metal electrode layer also has such a continuous metal part that any pair of point-positions in the part is continuously connected without breaks. The openings in the metal electrode layer are periodically arranged to form plural microdomains. The plural microdomains are so placed that the in-plane arranging directions thereof are oriented independently of each other. The thickness of the metal electrode layer is in the range of 10 to 200 nm.
Public/Granted literature
- US09153363B2 Light-transmitting metal electrode and process for production thereof Public/Granted day:2015-10-06
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