Invention Application
- Patent Title: SUBSTRATE STRUCTURE AND MANUFACTURING METHOD THEREOF
- Patent Title (中): 基板结构及其制造方法
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Application No.: US13737954Application Date: 2013-01-10
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Publication No.: US20140154463A1Publication Date: 2014-06-05
- Inventor: Shun-Hsiang Liang
- Applicant: UNIMICRON TECHNOLOGY CORP.
- Applicant Address: TW Taoyuan
- Assignee: UNIMICRON TECHNOLOGY CORP.
- Current Assignee: UNIMICRON TECHNOLOGY CORP.
- Current Assignee Address: TW Taoyuan
- Priority: TW101145509 20121204
- Main IPC: B23K26/38
- IPC: B23K26/38 ; H05K1/11

Abstract:
A substrate structure includes an insulation base material and a through hole. The through hole passes through the insulation base material. Besides, the through hole has a first opening, a second opening, and a third opening communicated with one another. The third opening is located between the first opening and the second opening. A first included angle is formed between an inner wall of the first opening and an inner wall of the third opening. A second included angle is formed between an inner wall of the second opening and the inner wall of the third opening. The minimum diameter of the third opening is at the center of the through hole and defines a neck end portion. Diameters of the first opening and the second opening gradually decrease in a direction toward the neck end portion.
Information query
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