发明申请
- 专利标题: Application of Reduced Dark Current Photodetector
- 专利标题(中): 减少暗电流检测器的应用
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申请号: US13964883申请日: 2013-08-12
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公开(公告)号: US20140159188A1公开(公告)日: 2014-06-12
- 发明人: Shimon Maimon
- 申请人: Shimon Maimon
- 主分类号: H01L27/146
- IPC分类号: H01L27/146
摘要:
A IDCA system with internal nBn photo-detector comprising: a photo-absorbing layer comprising an n-doped semiconductor exhibiting valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo-absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and conductance band gap sufficient to prevent tunneling of majority carriers from the photo-absorbing layer to the contact area, blocking the flow of thermalized majority carriers from the photo-absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, equalizing barrier conductance band energy levels and photo-absorbing layers.
公开/授权文献
- US09117726B2 Application of reduced dark current photodetector 公开/授权日:2015-08-25