公开(公告)号：US20170358701A1

公开(公告)日：2017-12-14

申请号：US15679487

申请日：2017-08-17

申请人： Shimon Maimon

发明人： Shimon Maimon

IPC分类号： H01L31/18 ,  H01L31/0296 ,  H01L31/0352 ,  B82Y20/00 ,  H01L31/0304 ,  H01L31/101

CPC分类号： H01L31/1832 ,  B82Y20/00 ,  G01J5/061 ,  G01J5/20 ,  G01J2005/0077 ,  H01L23/38 ,  H01L27/14669 ,  H01L31/02966 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/101 ,  H01L31/1844 ,  H01L2924/0002 ,  Y02E10/544 ,  H01L2924/00

摘要： A photodetector comprising a photoabsorber, comprising a doped semiconductor, a contact layer comprising a doped semiconductor and a barrier layer comprising a charge carrier compensated semiconductor, the barrier layer compensated by doping impurities such that it exhibits a valence band energy level substantially equal to the valence band energy level of the photo absorbing layer and a conduction band energy level exhibiting a significant band gap in relation to the conduction band of the photo absorbing layer, the barrier layer disposed between the photoabsorber and contact layers. The relationship between the photo absorbing layer and contact layer valence and conduction band energies and the barrier layer conduction and valance band energies is selected to facilitate minority carrier current flow while inhibiting majority carrier current flow between the contact and photo absorbing layers.

公开(公告)号：US07687871B2

公开(公告)日：2010-03-30

申请号：US11276962

申请日：2006-03-19

申请人： Shimon Maimon

发明人： Shimon Maimon

IPC分类号： H01L31/102

CPC分类号： H01L31/1832 ,  B82Y20/00 ,  H01L31/02966 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/101 ,  H01L31/1844 ,  Y02E10/544

摘要： A photo-detector comprising: a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, and conductance band energy levels of the barrier and photo absorbing layers are equalized.

摘要翻译： 一种光电检测器，包括：光吸收层，其包含呈现价带能级的n掺杂半导体; 阻挡层，邻近光吸收层的第一侧的阻挡层的第一侧，阻挡层呈现基本上等于光吸收层的掺杂半导体的价带能级的价带能级; 以及包括掺杂半导体的接触区域，所述接触区域与所述阻挡层的与所述第一侧相对的第二侧相邻，所述阻挡层具有足够的厚度和导电带隙，以防止多数载流子从所述光吸收层的隧穿到 接触区域并阻挡热吸收多数载流子从光吸收层到接触区域的流动。 或者，使用p掺杂半导体，并且阻挡层和光吸收层的电导带能级被均衡。

公开(公告)号：US20070215900A1

公开(公告)日：2007-09-20

申请号：US11276962

申请日：2006-03-19

申请人： Shimon Maimon

发明人： Shimon Maimon

IPC分类号： H01L31/00

CPC分类号： H01L31/1832 ,  B82Y20/00 ,  H01L31/02966 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/101 ,  H01L31/1844 ,  Y02E10/544

摘要： A photo-detector comprising: a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, and conductance band energy levels of the barrier and photo absorbing layers are equalized.

摘要翻译： 一种光电检测器，包括：光吸收层，其包含呈现价带能级的n掺杂半导体; 阻挡层，邻近光吸收层的第一侧的阻挡层的第一侧，阻挡层呈现基本上等于光吸收层的掺杂半导体的价带能级的价带能级; 以及包括掺杂半导体的接触区域，所述接触区域与所述阻挡层的与所述第一侧相对的第二侧相邻，所述阻挡层具有足够的厚度和导电带隙，以防止多数载流子从所述光吸收层的隧穿到 接触区域并阻挡热吸收多数载流子从光吸收层到接触区域的流动。 或者，使用p掺杂半导体，并且阻挡层和光吸收层的电导带能级被均衡。

公开(公告)号：USRE48642E1

公开(公告)日：2021-07-13

申请号：US16503534

申请日：2019-07-04

申请人： Shimon Maimon

发明人： Shimon Maimon

IPC分类号： H01L27/146 ,  H01L23/34 ,  G01J5/06

摘要： A IDCA system with internal nBn photo-detector comprising: a photo-absorbing layer comprising an n-doped semiconductor exhibiting valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo-absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and conductance band gap sufficient to prevent tunneling of majority carriers from the photo-absorbing layer to the contact area, blocking the flow of thermalized majority carriers from the photo-absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, equalizing barrier conductance band energy levels and photo-absorbing layers.

公开(公告)号：US09117726B2

公开(公告)日：2015-08-25

申请号：US13964883

申请日：2013-08-12

申请人： Shimon Maimon

发明人： Shimon Maimon

IPC分类号： H01L27/146 ,  H01L23/34 ,  G01J5/06

CPC分类号： H01L27/14669 ,  G01J5/061 ,  H01L23/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A IDCA system with internal nBn photo-detector comprising: a photo-absorbing layer comprising an n-doped semiconductor exhibiting valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo-absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and conductance band gap sufficient to prevent tunneling of majority carriers from the photo-absorbing layer to the contact area, blocking the flow of thermalized majority carriers from the photo-absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, equalizing barrier conductance band energy levels and photo-absorbing layers.

摘要翻译： 一种具有内部nBn光检测器的IDCA系统，包括：包含显示价带能级的n掺杂半导体的光吸收层; 阻挡层，邻近光吸收层的第一侧的阻挡层的第一侧，阻挡层呈现基本上等于光吸收层的掺杂半导体的价带能级的价带能级; 以及包括掺杂半导体的接触区域，所述接触区域与所述阻挡层的与所述第一侧相对的第二侧相邻，所述阻挡层表现出足以防止多数载流子从所述光吸收层穿透到所述光吸收层的厚度和电导带隙 接触区域，阻止热化多数载流子从光吸收层到接触区域的流动。 或者，使用p掺杂半导体，均衡屏障电导带能级和光吸收层。

公开(公告)号：US20140159188A1

公开(公告)日：2014-06-12

申请号：US13964883

申请日：2013-08-12

申请人： Shimon Maimon

发明人： Shimon Maimon

IPC分类号： H01L27/146

CPC分类号： H01L27/14669 ,  G01J5/061 ,  H01L23/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A IDCA system with internal nBn photo-detector comprising: a photo-absorbing layer comprising an n-doped semiconductor exhibiting valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo-absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and conductance band gap sufficient to prevent tunneling of majority carriers from the photo-absorbing layer to the contact area, blocking the flow of thermalized majority carriers from the photo-absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, equalizing barrier conductance band energy levels and photo-absorbing layers.

摘要翻译： 一种具有内部nBn光检测器的IDCA系统，包括：包含显示价带能级的n掺杂半导体的光吸收层; 阻挡层，邻近光吸收层的第一侧的阻挡层的第一侧，阻挡层呈现基本上等于光吸收层的掺杂半导体的价带能级的价带能级; 以及包括掺杂半导体的接触区域，所述接触区域与所述阻挡层的与所述第一侧相对的第二侧相邻，所述阻挡层表现出足以防止多数载流子从所述光吸收层穿透到所述光吸收层的厚度和电导带隙 接触区域，阻止热化多数载流子从光吸收层到接触区域的流动。 或者，使用p掺杂半导体，均衡屏障电导带能级和光吸收层。

公开(公告)号：US20110156097A1

公开(公告)日：2011-06-30

申请号：US13033211

申请日：2011-02-23

申请人： Shimon Maimon

发明人： Shimon Maimon

IPC分类号： H01L31/102

CPC分类号： H01L31/1832 ,  B82Y20/00 ,  H01L31/02966 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/101 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： A photo-detector comprising: a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, and conductance band energy levels of the barrier and photo absorbing layers are equalized.

摘要翻译： 一种光电检测器，包括：光吸收层，其包含呈现价带能级的n掺杂半导体; 阻挡层，邻近光吸收层的第一侧的阻挡层的第一侧，阻挡层呈现基本上等于光吸收层的掺杂半导体的价带能级的价带能级; 以及包括掺杂半导体的接触区域，所述接触区域与所述阻挡层的与所述第一侧相对的第二侧相邻，所述阻挡层具有足够的厚度和导电带隙，以防止多数载流子从所述光吸收层的隧穿到 接触区域并阻挡热吸收多数载流子从光吸收层到接触区域的流动。 或者，使用p掺杂半导体，并且阻挡层和光吸收层的电导带能级被均衡。

公开(公告)号：US06480265B2

公开(公告)日：2002-11-12

申请号：US09816736

申请日：2001-03-26

申请人： Shimon Maimon ,  Eli Benoliel

发明人： Shimon Maimon ,  Eli Benoliel

IPC分类号： G01C308

CPC分类号： G01S17/08 ,  G01S7/497 ,  G01S17/107 ,  G01S17/89

摘要： Apparatus for determining a distance of a target, the apparatus comprising a pulse transmitter, a gatable beam detector, and a comparator, the gatable beam detector being operable to obtain gated and calibration beam energy information of a pulse transmitted by the beam pulse transmitter for reflection from the target, and to pass the beam energy information to the comparator, thereby to obtain a ratio between the gated and the calibration beam energy, the ratio being inversely proportional to the distance. Also an array thereof for simultaneously obtaining distances of a multiplicity of points of a three-dimensional object in real time, in particular to obtain movement information of the target.

摘要翻译： 用于确定目标的距离的装置，该装置包括脉冲发射器，可点阵射束检测器和比较器，可点阵射束检测器可操作以获得波束脉冲发射器发射的用于反射的脉冲的门控和校准光束能量信息 并且将光束能量信息传递到比较器，从而获得门控和校准光束能量之间的比率，该比率与距离成反比。 同时也是用于实时地同时获得三维物体的多个点的距离的阵列，特别是获得目标的移动信息。

公开(公告)号：US11462657B1

公开(公告)日：2022-10-04

申请号：US17181669

申请日：2021-02-22

申请人： Shimon Maimon

发明人： Shimon Maimon

IPC分类号： H01L31/18 ,  H01L31/10 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/0296 ,  H01L27/146 ,  B82Y20/00 ,  G01J5/06 ,  G01J5/20 ,  H01L31/101 ,  G01J5/061 ,  H01L23/38 ,  G01J5/00

摘要： Photo-detector comprising: photo absorbing layer exhibiting a valence band energy level; a barrier layer, first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers between the photo absorbing layer and contact area, and block the flow of thermalized majority carriers between the photo absorbing layer and contact area. The photoabsorber layer extends past the one or more individual sections of the contact layer in the direction across the photodetector, and is monolithically provided for each of the individuals detector elements.

公开(公告)号：US11264528B2

公开(公告)日：2022-03-01

申请号：US15679487

申请日：2017-08-17

申请人： Shimon Maimon

发明人： Shimon Maimon

IPC分类号： H01L31/18 ,  H01L31/0296 ,  H01L31/10 ,  G01J5/06 ,  G01J5/20 ,  H01L27/146 ,  H01L31/101 ,  B82Y20/00 ,  H01L31/0352 ,  H01L31/0304 ,  G01J5/061 ,  H01L23/38 ,  G01J5/00

摘要： A photodetector comprising a photoabsorber, comprising a doped semiconductor, a contact layer comprising a doped semiconductor and a barrier layer comprising a charge carrier compensated semiconductor, the barrier layer compensated by doping impurities such that it exhibits a valence band energy level substantially equal to the valence band energy level of the photo absorbing layer and a conduction band energy level exhibiting a significant band gap in relation to the conduction band of the photo absorbing layer, the barrier layer disposed between the photoabsorber and contact layers. The relationship between the photo absorbing layer and contact layer valence and conduction band energies and the barrier layer conduction and valance band energies is selected to facilitate minority carrier current flow while inhibiting majority carrier current flow between the contact and photo absorbing layers.