发明申请
US20140164872A1 ERROR CORRECTED PRE-READ FOR UPPER PAGE WRITE IN A MULTI-LEVEL CELL MEMORY
有权
在多级单元存储器中的上一页写入的错误校正预读
- 专利标题： ERROR CORRECTED PRE-READ FOR UPPER PAGE WRITE IN A MULTI-LEVEL CELL MEMORY
- 专利标题（中）： 在多级单元存储器中的上一页写入的错误校正预读
-
申请号： US13710913申请日： 2012-12-11
-
公开(公告)号： US20140164872A1公开(公告)日： 2014-06-12
- 发明人: Robert E. Frickey , Yogesh B. Wakchaure , Iwen Chao , Xin Guo , Kristopher H. Gaewsky
- 申请人： Robert E. Frickey , Yogesh B. Wakchaure , Iwen Chao , Xin Guo , Kristopher H. Gaewsky
- 主分类号： G06F11/10
- IPC分类号： G06F11/10 ; G11C16/10
摘要：
Methods, apparatuses and articles of manufacture may receive a first page of data and correct one or more errors in the first page of data to generate a page of corrected data. A program command may then be sent with a second page of data and the page of corrected data, to program a page of memory to store the second page of data.
公开/授权文献
信息查询
