发明申请
US20140170819A1 HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE WITH IMPROVED BREAKDOWN VOLTAGE PERFORMANCE
有权
具有改进的断电电压性能的高电子移动晶体管结构
- 专利标题： HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE WITH IMPROVED BREAKDOWN VOLTAGE PERFORMANCE
- 专利标题（中）： 具有改进的断电电压性能的高电子移动晶体管结构
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申请号： US14185231申请日： 2014-02-20
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公开(公告)号： US20140170819A1公开(公告)日： 2014-06-19
- 发明人: Fu-Wei YAO , Chun-Wei HSU , Chen-Ju YU , Jiun-Lei Jerry YU , Fu-Chih YANG , Chih-Wen HSIUNG , King-Yuen WONG
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
A method comprises epitaxially growing a gallium nitride (GaN) layer over a silicon substrate, epitaxially growing a donor-supply layer over the GaN layer, and etching a portion of the donor-supply layer. The method also comprises depositing a passivation layer over the donor-supply layer and filling the etched portion of the donor-supply layer, forming a source and a drain on the donor-supply layer, and forming a gate structure between the source and the etched portion of the donor-supply layer. The method further comprises depositing contacts over the gate structure, the source, and the drain.