公开(公告)号：US20200373408A1

公开(公告)日：2020-11-26

申请号：US16947616

申请日：2020-08-10

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chun-Wei HSU ,  Jiun-Lei Jerry YU ,  Fu-Wei YAO ,  Chen-Ju YU ,  Fu-Chih YANG ,  Chun Lin TSAI

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/10 ,  H01L29/20 ,  H01L29/417 ,  H01L29/43 ,  H01L29/778 ,  H01L29/267

摘要： A method of forming a high electron mobility transistor (HEMT) includes a first III-V compound layer and a second III-V compound layer disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A source feature and a drain feature are disposed on the second III-V compound layer. A p-type layer is disposed on a portion of the second III-V compound layer between the source feature and the drain feature. A gate electrode is disposed on the p-type layer. A capping layer is disposed on the second III-V compound layer.

公开(公告)号：US20190252510A1

公开(公告)日：2019-08-15

申请号：US16394368

申请日：2019-04-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Fu-Wei YAO ,  Chen-Ju YU ,  King-Yuen WONG ,  Chun-Wei HSU ,  Jiun-Lei Jerry YU ,  Fu-Chih YANG ,  Chun Lin TSAI

IPC分类号： H01L29/45 ,  H01L29/778 ,  H01L29/20 ,  H01L29/08 ,  H01L29/66 ,  H01L21/285 ,  H01L21/02 ,  H01L29/205 ,  H01L29/417

CPC分类号： H01L29/452 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/28575 ,  H01L29/0843 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41725 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787

摘要： A high electron mobility transistor (HEMT) includes a first compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A salicide source feature and a salicide drain feature are in contact with the first III-V compound layer through the second III-V compound layer. A gate electrode is disposed over a portion of the second compound layer between the salicide source feature and the salicide drain feature.

公开(公告)号：US20170170295A1

公开(公告)日：2017-06-15

申请号：US15443861

申请日：2017-02-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Ju YU ,  Chih-Wen HSIUNG ,  Fu-Wei YAO ,  Chun-Wei HSU ,  King-Yuen WONG ,  Jiun-Lei Jerry YU ,  Fu-Chih YANG

IPC分类号： H01L29/66 ,  H01L29/778 ,  H01L29/20 ,  H01L29/06 ,  H01L29/08 ,  H01L29/205

CPC分类号： H01L29/66462 ,  H01L21/0254 ,  H01L21/2258 ,  H01L21/3065 ,  H01L21/32051 ,  H01L21/321 ,  H01L21/32133 ,  H01L21/324 ,  H01L29/0653 ,  H01L29/0843 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/66431 ,  H01L29/7787

摘要： A high electron mobility transistor (HEMT) includes a silicon substrate, an unintentionally doped gallium nitride (UID GaN) layer over the silicon substrate. The HEMT further includes a donor-supply layer over the UID GaN layer, a gate structure, a drain, and a source over the donor-supply layer. The HEMT further includes a dielectric layer having one or more dielectric plug portions in the donor-supply layer and top portions between the gate structure and the drain over the donor-supply layer. A method for making the HEMT is also provided.

公开(公告)号：US20160049505A1

公开(公告)日：2016-02-18

申请号：US14926783

申请日：2015-10-29

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： King-Yuen WONG ,  Chen-Ju YU ,  Fu-Wei YAO ,  Chun-Wei HSU ,  Jiun-Lei Jerry YU ,  Chih-Wen HSIUNG ,  Fu-Chih YANG

IPC分类号： H01L29/778 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66

CPC分类号： H01L29/7786 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/7787

摘要： A method of forming a semiconductor structure includes growing a second III-V compound layer over a first III-V compound layer, wherein the second III-V compound layer has a different band gap from the first III-V compound layer. The method further includes forming a source feature and a drain feature over the second III-V compound layer. The method further includes forming a gate dielectric layer over the second III-V compound layer, the source feature and the drain feature. The method further includes implanting at least one fluorine-containing compound into a portion of the gate dielectric layer. The method further includes forming a gate electrode over the portion of the gate dielectric layer.

摘要翻译： 形成半导体结构的方法包括在第一III-V化合物层上生长第二III-V化合物层，其中第二III-V化合物层与第一III-V化合物层具有不同的带隙。 该方法还包括在第二III-V复合层上形成源特征和漏极特征。 该方法还包括在第二III-V化合物层上形成栅介质层，源特征和漏极特征。 该方法还包括将至少一种含氟化合物注入到栅介质层的一部分中。 该方法还包括在栅介电层的一部分上形成栅电极。

公开(公告)号：US20150056766A1

公开(公告)日：2015-02-26

申请号：US14533864

申请日：2014-11-05

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chen-Ju YU ,  Chih-Wen HSIUNG ,  Fu-Wei YAO ,  Chun-Wei HSU ,  King-Yuen WONG ,  Jiun-Lei Jerry YU ,  Fu-Chih YANG

IPC分类号： H01L29/66 ,  H01L21/324 ,  H01L21/3065 ,  H01L21/3205 ,  H01L29/205 ,  H01L21/321 ,  H01L21/225 ,  H01L29/20 ,  H01L29/201 ,  H01L21/02 ,  H01L21/3213

CPC分类号： H01L29/66462 ,  H01L21/0254 ,  H01L21/2258 ,  H01L21/3065 ,  H01L21/32051 ,  H01L21/321 ,  H01L21/32133 ,  H01L21/324 ,  H01L29/0653 ,  H01L29/0843 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/66431 ,  H01L29/7787

摘要： A method includes epitaxially growing a gallium nitride (GaN) layer over a silicon substrate. The method further includes epitaxially growing a donor-supply layer over the GaN layer. The method further includes forming a source and a drain on the donor-supply layer. The method further includes forming a gate structure between the source and the drain on the donor-supply layer. The method further includes plasma etching a portion of a drift region of the donor-supply layer to a depth of less than 60% of a donor-supply layer thickness. The method further includes depositing a dielectric layer over the donor-supply layer.

摘要翻译： 一种方法包括在硅衬底上外延生长氮化镓（GaN）层。 该方法还包括在GaN层上外延生长施主供体层。 该方法还包括在供体层上形成源极和漏极。 该方法还包括在供体层上的源极和漏极之间形成栅极结构。 该方法还包括将供体供体层的漂移区域的一部分等离子体蚀刻到小于施主供体层厚度的60％的深度。 该方法还包括在供体供体层上沉积介电层。

公开(公告)号：US20180277646A1

公开(公告)日：2018-09-27

申请号：US15990241

申请日：2018-05-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Fu-Wei YAO ,  Chen-Ju YU ,  King-Yuen WONG ,  Chun-Wei HSU ,  Jiun-Lei Jerry YU ,  Fu-Chih YANG ,  Chun Lin TSAI

IPC分类号： H01L29/45 ,  H01L29/66 ,  H01L29/778 ,  H01L29/08 ,  H01L29/20 ,  H01L29/417 ,  H01L29/205 ,  H01L21/02 ,  H01L21/285

CPC分类号： H01L29/452 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/28575 ,  H01L29/0843 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41725 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787

摘要： A high electron mobility transistor (HEMT) includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A salicide source feature and a salicide drain feature are in contact with the first III-V compound layer through the second III-V compound layer. A gate electrode is disposed over a portion of the second III-V compound layer between the salicide source feature and the salicide drain feature.

公开(公告)号：US20170077255A1

公开(公告)日：2017-03-16

申请号：US15362465

申请日：2016-11-28

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Fu-Wei YAO ,  Chen-Ju YU ,  King-Yuen WONG ,  Chun-Wei HSU ,  Jiun-Lei Jerry YU ,  Fu-Chih YANG ,  Chun-Lin TSAI

IPC分类号： H01L29/45 ,  H01L29/20 ,  H01L21/285 ,  H01L29/66 ,  H01L21/02 ,  H01L29/778 ,  H01L29/205

CPC分类号： H01L29/452 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/28575 ,  H01L29/0843 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41725 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787

摘要： A high electron mobility transistor (HEMT) includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A salicide source feature and a salicide drain feature are in contact with the first III-V compound layer through the second III-V compound layer. A gate electrode is disposed over a portion of the second III-V compound layer between the salicide source feature and the salicide drain feature.

摘要翻译： 高电子迁移率晶体管（HEMT）包括第一III-V族化合物层。 第二III-V化合物层设置在第一III-V化合物层上，并且与组合物中的第一III-V化合物层不同。 自杀剂源特征和自杀物排放特征通过第二III-V化合物层与第一III-V化合物层接触。 栅极电极设置在第一III-V化合物层的一部分之间，位于自对准硅化物源特征和自对准硅化物漏极特征之间。

公开(公告)号：US20160351683A1

公开(公告)日：2016-12-01

申请号：US15233515

申请日：2016-08-10

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： King-Yuen WONG ,  Po-Chih CHEN ,  Chen-Ju YU ,  Fu-Chih YANG ,  Jiun-Lei Jerry YU ,  Fu-Wei YAO ,  Ru-Yi SU ,  Yu-Syuan LIN

IPC分类号： H01L29/66 ,  H01L29/51 ,  H01L29/778 ,  H01L29/20

CPC分类号： H01L29/66462 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/518 ,  H01L29/7786 ,  H01L29/7787

摘要： A channel layer is grown over a substrate, and an active layer is grown over the channel layer, wherein the active layer has a band gap discontinuity with the channel layer. A dielectric layer is deposited over the active layer, and the dielectric layer is patterned to expose a portion of the active layer. A metal diffusion barrier is formed over the exposed portion of the active layer, and a gate is deposited over the metal diffusion barrier.

摘要翻译： 在衬底上生长沟道层，并且在沟道层上生长活性层，其中活性层与沟道层具有带隙不连续性。 在有源层上沉积电介质层，并且对电介质层进行图案化以暴露活性层的一部分。 在有源层的暴露部分上形成金属扩散阻挡层，并且在金属扩散阻挡层上沉积栅极。

公开(公告)号：US20140170819A1

公开(公告)日：2014-06-19

申请号：US14185231

申请日：2014-02-20

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Fu-Wei YAO ,  Chun-Wei HSU ,  Chen-Ju YU ,  Jiun-Lei Jerry YU ,  Fu-Chih YANG ,  Chih-Wen HSIUNG ,  King-Yuen WONG

IPC分类号： H01L29/66

CPC分类号： H01L29/402 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

摘要： A method comprises epitaxially growing a gallium nitride (GaN) layer over a silicon substrate, epitaxially growing a donor-supply layer over the GaN layer, and etching a portion of the donor-supply layer. The method also comprises depositing a passivation layer over the donor-supply layer and filling the etched portion of the donor-supply layer, forming a source and a drain on the donor-supply layer, and forming a gate structure between the source and the etched portion of the donor-supply layer. The method further comprises depositing contacts over the gate structure, the source, and the drain.

摘要翻译： 一种方法包括在硅衬底上外延生长氮化镓（GaN）层，在GaN层上外延生长施主供体层，以及蚀刻供体供体层的一部分。 该方法还包括在施主供体层上沉积钝化层，并填充供体供体层的蚀刻部分，在供体供体层上形成源极和漏极，并在源极和蚀刻层之间形成栅极结构 供体层的一部分。 该方法还包括在栅极结构，源极和漏极之上沉积接触。

公开(公告)号：US20170133484A1

公开(公告)日：2017-05-11

申请号：US15412924

申请日：2017-01-23

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jiun-Lei Jerry YU ,  Fu-Wei YAO ,  Chen-Ju YU ,  Chun-Wei HSU ,  King-Yuen WONG

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/45 ,  H01L29/205 ,  H01L29/40 ,  H01L29/778 ,  H01L29/20

CPC分类号： H01L29/66462 ,  H01L21/02381 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/452 ,  H01L29/778 ,  H01L29/7787

摘要： A circuit structure includes a substrate, a III-V semiconductor compound over the substrate, a AlxGa(1-x)N (AlGaN) layer over the III-V semiconductor compound, a gate over the AlGaN layer, a passivation film over the gate and over a portion of the AlGaN layer, a source structure, and a drain structure on an opposite side of the gate from the source structure, wherein X ranges from 0.1 to 1. The source structure has a source contact portion and an overhead portion. The overhead portion is over at least a portion of the passivation film between the source contact portion and the gate. A distance between the source contact portion and the gate is less than a distance between the gate and the drain structure.