发明申请
- 专利标题： Structure And Method For Integrated Devices On Different Substartes With Interfacial Engineering
- 专利标题（中）： 用于界面工程的不同子集合器件的结构和方法
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申请号： US13725330申请日： 2012-12-21
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公开(公告)号： US20140175513A1公开(公告)日： 2014-06-26
- 发明人: Liang-Gi Yao , I-Ming Chang , Yasutoshi Okuno , Chih-Hao Chang , Shou Zen Chang , Clement Hsingien Wann
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/02
摘要：
The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a first semiconductor material and a first reactivity; and a low reactivity capping layer of disposed on the semiconductor substrate, wherein the low reactivity capping layer includes a second semiconductor material and a second reactivity less than the first reactivity, the low reactivity capping layer includes silicon germanium Si1−xGex and x is less than about 30%.
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