发明申请
US20140175573A1 SOI WAFER, MANUFACTURING METHOD THEREFOR, AND MEMS DEVICE
审中-公开
SOI WAFER，其制造方法和MEMS器件
- 专利标题： SOI WAFER, MANUFACTURING METHOD THEREFOR, AND MEMS DEVICE
- 专利标题（中）： SOI WAFER，其制造方法和MEMS器件
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申请号： US14193209申请日： 2014-02-28
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公开(公告)号： US20140175573A1公开(公告)日： 2014-06-26
- 发明人: Eiji YOSHIKAWA , Jyunichi ICHIKAWA , Yukihisa YOSHIDA
- 申请人： Eiji YOSHIKAWA , Jyunichi ICHIKAWA , Yukihisa YOSHIDA
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2012-098447 20120424
- 主分类号： B81B7/00
- IPC分类号： B81B7/00 ; H01L23/26
摘要：
In order to obtain a SOI wafer having an excellent ability of gettering metal impurities, an efficient method of manufacturing a SOI wafer, and a highly reliable MEMS device using such a SOI wafer, provided is a SOI wafer including: a support wafer (1) and an active layer wafer (6) which are bonded together with an oxide film (3) therebetween, each of the support wafer (1) and the active layer wafer (6) being a silicon wafer; a cavity (1b) formed in a bonding surface of at least one of the silicon wafers; and a gettering material (2) formed on a surface on a side opposite to the bonding surface.
公开/授权文献
- US09266715B2 SOI wafer, manufacturing method therefor, and MEMS device 公开/授权日：2016-02-23
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