公开(公告)号：US20230123544A1

公开(公告)日：2023-04-20

申请号：US17913956

申请日：2021-04-08

申请人： LYNRED

发明人： Sylvain Lemettre

IPC分类号： B81B7/00 ,  H01L23/26

摘要： A method of manufacturing a microelectromechanical system includes forming of an electromechanical element on a substrate. The method further includes preparation of an encapsulation package to form a sealed cavity integrating the electromechanical element, with the sealed cavity having a volume smaller than 10 mm3. The method includes physical vapor deposition of a getter film on the substrate or on a wall of the encapsulation package so that the getter film has a specific absorption surface area smaller than 8 m2/g, and sealing of the encapsulation package on the substrate by means of a thermal sealing cycle having a temperature enabling to activate said getter film.

公开(公告)号：US11569181B2

公开(公告)日：2023-01-31

申请号：US17113032

申请日：2020-12-05

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Sushumna Iruvanti ,  Shidong Li ,  Steve Ostrander ,  Jon Alfred Casey ,  Brian Richard Sundlof

IPC分类号： H01L23/00 ,  H01L21/02 ,  H01L23/26 ,  H01L21/768

摘要： Moisture-driven degradation of a crack stop in a semiconductor die is mitigated by forming a groove in an upper surface of the die between an edge of the die and the crack stop; entirely filling the groove with a moisture barrier material; preventing moisture penetration of the semiconductor die by presence of the moisture barrier material; and dissipating mechanical stress in the moisture barrier material without presenting a stress riser in the bulk portion of the die. The moisture barrier material is at least one of moisture-absorbing, moisture adsorbing, and hydrophobic.

公开(公告)号：US11482693B2

公开(公告)日：2022-10-25

申请号：US17043881

申请日：2020-04-14

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Chengyuan Luo

IPC分类号： H01L51/00 ,  H01L51/50 ,  H01L51/52 ,  H01L27/32 ,  H01L23/26 ,  H01L23/28 ,  H01L23/00

摘要： An electroluminescent device, includes: a base substrate; a light emitting unit provided on the base substrate; a first accommodating structure surrounding the light emitting unit and provided on the base substrate; a first color rendering material filled in the first accommodating structure; a first inorganic thin film encapsulation layer covering the light emitting unit and the first color rendering material; a second accommodating structure provided on one side of the first inorganic thin film encapsulation layer distal to the first color rendering material; a second color rendering material filled in the second accommodating structure; and a second inorganic thin film encapsulation layer sealing the second color rendering material in the second accommodating structure; wherein the first color rendering material and the second color rendering material are capable of producing a color development reaction after mixture.

公开(公告)号：US11094911B2

公开(公告)日：2021-08-17

申请号：US16309450

申请日：2018-09-12

申请人： Wuhan China Star Optoelectronics Technology Co., Ltd.

发明人： Yeqing Wu

IPC分类号： H01L51/52 ,  H01L27/32 ,  H01L51/56 ,  H01L23/26 ,  H01L23/00

摘要： Provided are an organic light emitting diode display panel and packaging method thereof. The organic light emitting diode display panel is provided with an adhesive layer on a passivation layer corresponding to a position of a sealant. When packaging the organic light emitting diode, the sealant on a cover plate is adhered corresponding to a position of the adhesive layer. The adhesive layer has a good bonding force with the sealant and also has a good bonding force with the passivation layer. Thus, water vapor does not easily enter the organic light emitting diode element, which will not reduce the performance of the organic light emitting diode element to improve a service life of organic light emitting diode element and to possess a good reliability performance.

公开(公告)号：US10937665B2

公开(公告)日：2021-03-02

申请号：US16327713

申请日：2016-09-30

申请人： Intel Corporation

发明人： Aaron D. Lilak ,  Harold W. Kennel ,  Patrick Morrow ,  Rishabh Mehandru ,  Stephen M. Cea

IPC分类号： H01L21/322 ,  H01L21/265 ,  H01L21/768 ,  H01L21/38 ,  H01L21/70 ,  H01L23/26

摘要： Methods and apparatus for gettering impurities in semiconductors are disclosed. A disclosed example multilayered die includes a substrate material, a component layer below the substrate material, and an impurity attractant region disposed in the substrate material.

公开(公告)号：US10892233B2

公开(公告)日：2021-01-12

申请号：US16177100

申请日：2018-10-31

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Sushumna Iruvanti ,  Shidong Li ,  Steve Ostrander ,  Jon Alfred Casey ,  Brian Richard Sundlof

IPC分类号： H01L23/00 ,  H01L21/02 ,  H01L23/26 ,  H01L21/768

摘要： Moisture-driven degradation of a crack stop in a semiconductor die is mitigated by forming a groove in an upper surface of the die between an edge of the die and the crack stop; entirely filling the groove with a moisture barrier material; preventing moisture penetration of the semiconductor die by presence of the moisture barrier material; and dissipating mechanical stress in the moisture barrier material without presenting a stress riser in the bulk portion of the die. The moisture barrier material is at least one of moisture-absorbing, moisture adsorbing, and hydrophobic.

公开(公告)号：US10811331B2

公开(公告)日：2020-10-20

申请号：US16285635

申请日：2019-02-26

申请人： PA&E, Hermetic Solutions Group, LLC

发明人： Hua Xia ,  Nathan Foster ,  Nelson Settles ,  Steve Hall

IPC分类号： H01L23/31 ,  H01L23/045 ,  H01L23/26 ,  H01L23/373

摘要： A hermetically sealed electronic package may include a thermal panel having a panel interior surface and a panel exterior surface with electronic device(s) in thermal communication with the panel interior surface. An enclosure, isolating environmental communication from internal electronic devices and modules, may be coupled to the thermal panel, and the enclosure may have an enclosure interior surface and an enclosure exterior surface. A plurality of electrical feedthroughs may be coupled to the package enclosure for signal and data transmission, and the conducting pin(s) in every electrical feedthrough may be bonded by a hydrophobic sealing material for harsh environmental electrical signal, data and power transmission. The ratio of sealing length over sealing bead diameter in the electrical feedthrough subassembly may have a preferred value from 2 to 3; and the ratio of the sealing bead diameter over pin diameter in the electrical feedthrough subassembly may have a preferred value from 1.5 to 2.0, where a preferred thermal stress resistance could be designed for making highly hermetic sealed electronic package.

公开(公告)号：US10804196B2

公开(公告)日：2020-10-13

申请号：US16296281

申请日：2019-03-08

申请人： Murata Manufacturing Co., Ltd.

发明人： Takashi Iwamoto

IPC分类号： H01L23/26 ,  H01L23/522 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H05K3/46 ,  H05K3/34 ,  H01L23/14 ,  H01L25/07 ,  H01L23/12 ,  H01L25/18 ,  H01L25/065

摘要： An electronic component device includes an electronic component embedded in a resin structure and including a portion exposed on a first main surface of the resin structure, first wiring lines extending from the first main surface of the resin structure to the electronic component and electrically connected to the electronic component, second wiring lines on a side of a second main surface of the resin structure and electrically connected to respective connection electrodes that are electrically connected to the first wiring lines, and low-elastic modulus layers at a height position between the first wiring lines and the exposed portion of the electronic component in respective regions in which the first wiring lines straddle boundaries between the resin structure and the electronic component, having elastic moduli lower than those of the first wiring lines, and made of a conductive material.

公开(公告)号：US10685957B2

公开(公告)日：2020-06-16

申请号：US16005915

申请日：2018-06-12

申请人： Samsung Electronics Co., Ltd.

发明人： Sung-Hyun Choi ,  Yong-Suk Tak ,  Gi-Gwan Park ,  Bon-Young Koo ,  Ki-Yeon Park ,  Won-Oh Seo

IPC分类号： H01L27/088 ,  H01L29/66 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/417 ,  H01L29/78 ,  H01L21/02 ,  H01L21/8234 ,  H01L23/26 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165

摘要： A semiconductor device includes an active fin on a substrate, a gate structure on the active fin, a gate spacer structure on a sidewall of the gate structure, and a source/drain layer on at least a portion of the active fin adjacent the gate spacer structure. The gate spacer structure includes a wet etch stop pattern, an oxygen-containing silicon pattern, and an outgas sing prevention pattern sequentially stacked.

公开(公告)号：US20200176352A1

公开(公告)日：2020-06-04

申请号：US16612340

申请日：2017-06-30

申请人： Intel Corporation

发明人： Je-Young CHANG ,  Chandra M. JHA ,  Shankar DEVASENATHIPATHY ,  Feras EID ,  John C. JOHNSON

IPC分类号： H01L23/427 ,  H01L23/26 ,  H01L23/373 ,  H01L23/433 ,  H01L21/48 ,  F28D15/02

摘要： An integrated circuit die includes a device side and a backside opposite the device side, wherein the backside includes a heat transfer enhancement configuration formed therein or a heat transfer enhancement structure formed thereon each of which enhance a heat transfer area or a boiling nucleation site density over a planar backside surface. A method of forming an integrated circuit assembly includes disposing a heat exchanger on a multi-chip package, the multi-chip package including at least one integrated circuit die including a device side and an opposite backside includes a heat transfer enhancement configuration formed therein or a heat enhancement structure formed thereon; and contacting the backside of the at least one integrated circuit die with water or other cooling fluids, such as a mixture of water and antifreeze, alcohol, inert fluorinated hydrocarbon, helium, and/or other suitable cooling fluid (either liquid or gas).