A schottky barrier diode includes: an n− type epitaxial layer that is disposed at a first surface of an n+ type silicon carbide substrate; a plurality of n type pillar areas that are disposed at the inside of the n− type epitaxial layer and that are disposed at a first portion of the first surface of the n+ type silicon carbide substrate; a p type area that is disposed at the inside of the n− type epitaxial layer and that is extended in a direction perpendicular to the n type pillar areas; a plurality of p+ areas in which the n− type epitaxial layer is disposed at a surface thereof and that are separated from the n type pillar areas and the p type area; a schottky electrode that is disposed on the n− type epitaxial layer and the p+ areas; and an ohmic electrode that is disposed at a second surface of the n+ type silicon carbide substrate.