Invention Application
US20140183735A1 SYSTEM AND METHOD OF COMBINING DAMASCENES AND SUBTRACT METAL ETCH FOR ADVANCED BACK END OF LINE INTERCONNECTIONS
有权
用于线性互连的高级后端的组合金属离子和金属离子的组合的系统和方法
- Patent Title: SYSTEM AND METHOD OF COMBINING DAMASCENES AND SUBTRACT METAL ETCH FOR ADVANCED BACK END OF LINE INTERCONNECTIONS
- Patent Title (中): 用于线性互连的高级后端的组合金属离子和金属离子的组合的系统和方法
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Application No.: US13731878Application Date: 2012-12-31
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Publication No.: US20140183735A1Publication Date: 2014-07-03
- Inventor: John H. ZHANG , Lawrence A. Clevenger , Carl Radens , Yiheng XU , Walter Kleemeier , Cindy Goldberg
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , STMICROELECTRONICS, INC.
- Applicant Address: US NY Armonk US TX Coppell
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,STMICROELECTRONICS, INC.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,STMICROELECTRONICS, INC.
- Current Assignee Address: US NY Armonk US TX Coppell
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/538
Abstract:
Metal interconnections are formed in an integrated by combining damascene processes and subtractive metal etching. A wide trench is formed in a dielectric layer. A conductive material is deposited in the wide trench. Trenches are etched in the conductive material to delineate a plurality of metal plugs each contacting a respective metal track exposed by the wide trench.
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