Invention Application
- Patent Title: MANGANESE-CONTAINING FILM FORMING METHOD, PROCESSING SYSTEM, ELECTRONIC DEVICE MANUFACTURING METHOD AND ELECTRONIC DEVICE
- Patent Title (中): 包含膜的成膜方法，加工系统，电子装置制造方法和电子装置
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Application No.: US14139089Application Date: 2013-12-23
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Publication No.: US20140183742A1Publication Date: 2014-07-03
- Inventor: Kenji MATSUMOTO
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Priority: JP2012-285441 20121227
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/532
Abstract:
A manganese-containing film forming method for forming a manganese-containing film on an underlying layer containing silicon and oxygen includes: degassing the underlying layer formed on a processing target by thermally treating the processing target, the underlying layer containing silicon and oxygen; and forming a manganese metal film on the degassed underlying layer by chemical deposition using a gas containing a manganese compound. Forming a manganese metal film includes: setting a film formation temperature to be higher than a degassing temperature; introducing a reducing reaction gas; and forming a manganese-containing film including an interfacial layer formed in an interface with the underlying layer and a manganese metal film formed on the interfacial layer, the interfacial layer being made up of a film of at least one of a manganese silicate and a manganese oxide.
Public/Granted literature
Information query
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