发明申请
US20140185373A1 SUPPLY VOLTAGE GENERATING CIRCUIT AND SEMICONDUCTOR DEVICE HAVING THE SAME
有权
供电电压发生电路和具有该电路的半导体器件
- 专利标题: SUPPLY VOLTAGE GENERATING CIRCUIT AND SEMICONDUCTOR DEVICE HAVING THE SAME
- 专利标题(中): 供电电压发生电路和具有该电路的半导体器件
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申请号: US14201999申请日: 2014-03-10
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公开(公告)号: US20140185373A1公开(公告)日: 2014-07-03
- 发明人: Shuichi TSUKADA
- 申请人: Shuichi TSUKADA
- 优先权: JP2009-135209 20090604
- 主分类号: G11C13/00
- IPC分类号: G11C13/00
摘要:
A supply voltage generating circuit includes a first charge pump circuit that generates a first internal supply voltage, and second charge pump circuit that generates a second internal supply voltage. The absolute value of the second internal supply voltage is greater than that of the first internal supply voltage. The output terminal of the first charge pump circuit is connected to a secondary-side charging terminal of the second charge pump circuit. The secondary-side is an output-side of the corresponding charge pump circuit, and the charging terminal is an auxiliary charging terminal that supplies an auxiliary charge to a secondary-side output terminal of the corresponding charge pump circuit. The output terminal of the second charge pump circuit outputs a voltage value that is the result of adding a prescribed voltage value to the value of the first internal supply voltage applied to the charging terminal.
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