发明申请
US20140186620A1 FABRICATION AND PASSIVATION OF SILICON SURFACES 有权
硅表面的制造和钝化

FABRICATION AND PASSIVATION OF SILICON SURFACES
摘要:
Embodiments described herein are related to methods for processing substrates such as silicon substrates. In some cases, the method may provide the ability to passivate a silicon surface at relatively low temperatures and/or in the absence of a solvent. Methods described herein may be useful in the fabrication of a wide range of devices, including electronic devices such as photovoltaic devices, solar cells, organic light-emitting diodes, sensors, and the like.
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