发明申请
- 专利标题: FABRICATION AND PASSIVATION OF SILICON SURFACES
- 专利标题(中): 硅表面的制造和钝化
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申请号: US14085275申请日: 2013-11-20
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公开(公告)号: US20140186620A1公开(公告)日: 2014-07-03
- 发明人: Karen K. Gleason , Rong Yang , Yaron Segal , Tonio Buonassisi , Baby Reeja Jayan
- 申请人: Karen K. Gleason , Rong Yang , Yaron Segal , Tonio Buonassisi , Baby Reeja Jayan
- 主分类号: B05D1/00
- IPC分类号: B05D1/00
摘要:
Embodiments described herein are related to methods for processing substrates such as silicon substrates. In some cases, the method may provide the ability to passivate a silicon surface at relatively low temperatures and/or in the absence of a solvent. Methods described herein may be useful in the fabrication of a wide range of devices, including electronic devices such as photovoltaic devices, solar cells, organic light-emitting diodes, sensors, and the like.
公开/授权文献
- US09656294B2 Fabrication and passivation of silicon surfaces 公开/授权日:2017-05-23
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