发明申请
- 专利标题: METHOD OF PROTECTING AN INTERLAYER DIELECTRIC LAYER AND STRUCTURE FORMED THEREBY
- 专利标题(中): 保护层间介质层的方法及其形成的结构
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申请号: US13735949申请日: 2013-01-07
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公开(公告)号: US20140191333A1公开(公告)日: 2014-07-10
- 发明人: Chun-Wei CHANG , Yi-An LIN , Neng-Kuo CHEN , Sey-Ping SUN , Clement Hsingjen WANN , Yu-Lien HUANG
- 申请人: Chun-Wei CHANG , Yi-An LIN , Neng-Kuo CHEN , Sey-Ping SUN , Clement Hsingjen WANN , Yu-Lien HUANG
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; H01L21/02
摘要:
This description relates to a method including forming an interlayer dielectric (ILD) layer and a dummy gate structure over a substrate and forming a cavity in a top portion of the ILD layer. The method further includes forming a protective layer to fill the cavity. The method further includes planarizing the protective layer. A top surface of the planarized protective layer is level with a top surface of the dummy gate structure. This description also relates to a semiconductor device including first and second gate structures and an ILD layer formed on a substrate. The semiconductor device further includes a protective layer formed on the ILD layer, the protective layer having a different etch selectivity than the ILD layer, where a top surface of the protective layer is level with the top surfaces of the first and second gate structures.