Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
- Patent Title (中): 半导体器件
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Application No.: US14140650Application Date: 2013-12-26
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Publication No.: US20140191421A1Publication Date: 2014-07-10
- Inventor: Kouichi SAWADA , Yasushi TANAKA
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya-city
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya-city
- Priority: JP2013-608 20130107; JP2013-229502 20131105
- Main IPC: H01L23/528
- IPC: H01L23/528

Abstract:
A semiconductor device includes a semiconductor substrate, an interlayer insulation film, multiple wiring layers, a first hard film, and an electrical pad. The semiconductor substrate has a semiconductor element. The interlayer insulation film is disposed above the semiconductor substrate. The multiple wiring layers are disposed within the interlayer insulation film. The first hard film is disposed above the interlayer insulation film, and the first hard film is harder than the interlayer insulation film. The electrical pad is disposed above the first hard film, and the electrical pad is used for an external connection. The electrical pad includes a lower layer pad, the upper layer pad, and a second hard film.
Public/Granted literature
- US09053973B2 Semiconductor device Public/Granted day:2015-06-09
Information query
IPC分类: