公开(公告)号：US20140191421A1

公开(公告)日：2014-07-10

申请号：US14140650

申请日：2013-12-26

Applicant: DENSO CORPORATION

Inventor： Kouichi SAWADA ,  Yasushi TANAKA

IPC: H01L23/528

CPC classification number: H01L24/11 ,  H01L23/3114 ,  H01L23/3192 ,  H01L23/53223 ,  H01L23/53295 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor substrate, an interlayer insulation film, multiple wiring layers, a first hard film, and an electrical pad. The semiconductor substrate has a semiconductor element. The interlayer insulation film is disposed above the semiconductor substrate. The multiple wiring layers are disposed within the interlayer insulation film. The first hard film is disposed above the interlayer insulation film, and the first hard film is harder than the interlayer insulation film. The electrical pad is disposed above the first hard film, and the electrical pad is used for an external connection. The electrical pad includes a lower layer pad, the upper layer pad, and a second hard film.

Abstract translation: 半导体器件包括半导体衬底，层间绝缘膜，多个布线层，第一硬膜和电焊盘。 半导体衬底具有半导体元件。 层间绝缘膜设置在半导体衬底的上方。 多层布线层设置在层间绝缘膜内。 第一硬膜设置在层间绝缘膜的上方，第一硬膜比层间绝缘膜硬。 电焊盘设置在第一硬膜上方，电焊盘用于外部连接。 电垫包括下层衬垫，上层衬垫和第二硬膜。

公开(公告)号：US20220037523A1

公开(公告)日：2022-02-03

申请号：US17505747

申请日：2021-10-20

Applicant: DENSO CORPORATION

Inventor： Youhei ODA ,  Kouichi SAWADA

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/10 ,  H01L29/66

Abstract: A semiconductor device includes a semiconductor switching element having a drift layer, a body region, a first impurity region, trench gate structures, a high impurity concentration layer, an interlayer insulation film, an upper electrode and a lower electrode. The body region is arranged on the drift layer. The first impurity region is arranged in a surface portion of the body region in the body region and has an impurity concentration higher than the drift layer. Each of the trench gate structures includes a trench. A shield electrode, an intermediate insulation film and a gate electrode layer are stacked through an insulation film in the trench. The high impurity concentration layer is arranged on a side opposite to the body region to sandwich the drift layer between the high impurity concentration layer and the body region. The interlayer insulation film is arranged on the trench gate structures.