A memory subsystem includes an adaptive output voltage to provide a voltage based on a power profile of a memory device of the memory subsystem. A charge pump increases the voltage to a level needed to write data to the memory device. The voltage provided is based on the power profile of the memory device, which indicates a voltage level that provides good efficiency for the charge pump, and is within maximum levels for the memory device. The voltage can be higher than a nominal voltage indicated for the memory device in a specification.