DYNAMIC LINKING OF CODESETS IN UNIVERSAL REMOTE CONTROL DEVICES
    4.
    发明申请
    DYNAMIC LINKING OF CODESETS IN UNIVERSAL REMOTE CONTROL DEVICES 有权
    通用远程控制设备中代码的动态链接

    公开(公告)号:US20110102230A1

    公开(公告)日:2011-05-05

    申请号:US13005017

    申请日:2011-01-12

    Abstract: A codeset having function-code combinations is provisioned on a controlling device to control functions of an intended target device. Input is provided to the controlling device which designates a function to be controlled on the intended target device. From a plurality of codes that are each associated with the designated function in a database stored in a memory of the controlling device a first code that is determined to be valid for use in controlling the designated function on the intended target device is selected. When the codeset is then provisioned on the controlling device, the provisioned codeset includes as a function-code combination thereof the designated function and the first code.

    Abstract translation: 具有功能代码组合的代码集被提供在控制设备上以控制预期目标设备的功能。 向控制装置提供输入,该控制装置指定要在目标装置上控制的功能。 从存储在控制装置的存储器中的数据库中的与指定功能相关联的多个代码中选择被确定为有效用于控制预期目标设备上的指定功能的第一代码。 当代码集然后在控制设备上被提供时,所提供的代码集包括作为其指定功能和第一代码的功能代码组合。

    Time multiplexed dynamic on-die termination
    5.
    发明授权
    Time multiplexed dynamic on-die termination 有权
    时间复用动态片上终端

    公开(公告)号:US07414426B2

    公开(公告)日:2008-08-19

    申请号:US11296993

    申请日:2005-12-07

    CPC classification number: H04L25/0298 G06F13/4086

    Abstract: Embodiments of the invention are generally directed to systems, methods, and apparatuses for time-multiplexed dynamic on-die termination. In an embodiment, an integrated circuit receives, during a first clock, an on-die termination (ODT) activation signal at its ODT pin. The integrated circuit also receives, during a second clock, an ODT value selection signal on its ODT pin. In an embodiment, the integrated circuit prevents a reset of the state of the ODT activation signal for a predetermined period of time to enable the multiplexing of signals on the ODT pin. Other embodiments are described and claimed.

    Abstract translation: 本发明的实施例一般涉及用于时分复用动态片上终端的系统,方法和装置。 在一个实施例中,集成电路在第一时钟期间接收其ODT引脚上的管芯端接(ODT)激活信号。 在第二个时钟期间,集成电路还在其ODT引脚上接收ODT值选择信号。 在一个实施例中,集成电路防止了ODT激活信号的状态的复位达预定的时间段,以便能够复用ODT引脚上的信号。 描述和要求保护其他实施例。

    Dynamic on-die termination launch latency reduction
    6.
    发明申请
    Dynamic on-die termination launch latency reduction 有权
    动态片上终端启动延迟降低

    公开(公告)号:US20070126464A1

    公开(公告)日:2007-06-07

    申请号:US11296960

    申请日:2005-12-07

    Abstract: Embodiments of the invention are generally directed to systems, methods, and apparatuses for dynamic on-die termination launch latency reduction. In some embodiments, an integrated circuit includes an input/output (I/O) circuit to receive a command and a termination resistance circuit to provide a termination resistance for the I/O circuit. The integrated circuit may further include control logic to establish an initial termination resistance during a preamble associated with the command. Other embodiments are described and claimed.

    Abstract translation: 本发明的实施例通常涉及用于动态片上终端启动延迟降低的系统,方法和装置。 在一些实施例中,集成电路包括用于接收命令的输入/输出(I / O)电路和用于为I / O电路提供终端电阻的终端电阻电路。 集成电路还可以包括控制逻辑,以在与命令相关联的前导码段期间建立初始终止电阻。 描述和要求保护其他实施例。

    ADAPTIVE VOLTAGE INPUT TO A CHARGE PUMP
    8.
    发明申请
    ADAPTIVE VOLTAGE INPUT TO A CHARGE PUMP 有权
    自适应电压输入到充电泵

    公开(公告)号:US20140192607A1

    公开(公告)日:2014-07-10

    申请号:US13976791

    申请日:2012-05-08

    CPC classification number: G11C5/145 G11C11/4074 G11C29/021 G11C29/028

    Abstract: A memory subsystem includes an adaptive output voltage to provide a voltage based on a power profile of a memory device of the memory subsystem. A charge pump increases the voltage to a level needed to write data to the memory device. The voltage provided is based on the power profile of the memory device, which indicates a voltage level that provides good efficiency for the charge pump, and is within maximum levels for the memory device. The voltage can be higher than a nominal voltage indicated for the memory device in a specification.

    Abstract translation: 存储器子系统包括自适应输出电压,以基于存储器子系统的存储器件的功率曲线来提供电压。 电荷泵将电压提高到将数据写入存储器件所需的水平。 所提供的电压基于存储器件的功率曲线,其指示为电荷泵提供良好效率的电压电平,并且在存储器件的最大电平内。 电压可以高于规范中为存储器件指示的额定电压。

    DELAY-COMPENSATED ERROR INDICATION SIGNAL
    9.
    发明申请
    DELAY-COMPENSATED ERROR INDICATION SIGNAL 有权
    延迟补偿错误指示信号

    公开(公告)号:US20140013168A1

    公开(公告)日:2014-01-09

    申请号:US13997850

    申请日:2012-03-31

    Abstract: A memory subsystem has multiple memory devices coupled to a command/address line and an error alert line, the error alert line delay-compensated to provide deterministic alert signal timing. The command/address line and the error alert line are connected between the memory devices and a memory controller that manages the memory devices. The command/address line is driven by the memory controller, and the error alert line is driven by the memory devices.

    Abstract translation: 存储器子系统具有耦合到命令/地址线和错误警报线的多个存储器件,误差警报线被延迟补偿以提供确定性警报信号定时。 命令/地址线和错误警报线连接在存储器件和管理存储器件的存储器控​​制器之间。 命令/地址线由存储器控制器驱动,错误警报线由存储器件驱动。

    METHOD TO STAGGER SELF REFRESHES
    10.
    发明申请
    METHOD TO STAGGER SELF REFRESHES 有权
    自动刷新的方法

    公开(公告)号:US20110252193A1

    公开(公告)日:2011-10-13

    申请号:US12758667

    申请日:2010-04-12

    CPC classification number: G11C11/406 G11C11/40611

    Abstract: A system, device, and method for designating a first rank among a plurality of memory ranks of a Memory Module as a primary rank and a second one or more ranks as secondary ranks, triggering, via hardware logic internal to the Memory Module coupled with the plurality of memory ranks, a refresh of the primary rank at a first time (e.g., Time1), and triggering a non overlapping staggered refresh of each of the secondary ranks at a second one or more times (e.g., Time2 through Timen) corresponding to each of the respective memory ranks designated as the secondary ranks.

    Abstract translation: 一种用于将作为主等级的存储器模块的多个存储器级别中的第一级指定为第二级别的第二级别的系统,设备和方法,并且经由与存储器模块耦合的存储器模块内部的硬件逻辑触发, 多个存储器等级,第一次刷新主等级(例如,Time1),并且在第二次或更多次(例如,Time2至Timen)触发每个次级队列的非重叠交错刷新,对应于 每个相应的记忆级别被指定为次级排名。

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