Abstract:
In one embodiment, an apparatus comprises a first connector to couple to a connector of a memory card, the memory card comprising a first sense node to sense a supply voltage at a first location of the memory card, the first connector comprising a voltage supply pin; a ground pin; and a sense pin to couple to the first sense node; a first sense line to couple to the first sense node through the sense pin; and a voltage regulator coupled to the first sense line, the voltage regulator to provide the supply voltage based on feedback received from the first sense node of the memory card via the first sense line.
Abstract:
A register not connected to a data bus is read by transferring data across an address bus to a device connected to the data bus, from which the data is read by a device connected to the data bus. The register resides in a register device connected via the address bus to a memory device that is connected to both the address bus and the data bus. A host processor triggers the register device to transfer information over the address bus to a register on the memory device. The host processor then reads the information from the register of the memory device.
Abstract:
Configurable central processing unit (CPU) package substrates are disclosed. A package substrate is described that includes a processing device interface. The package substrate also includes a memory device electrical interface disposed on the package substrate. The package substrate also includes a removable memory mechanical interface disposed proximately to the memory device electrical interface. The removable memory mechanical interface is to allow a memory device to be easily removed from the package substrate after attachment of the memory device to the package substrate.
Abstract:
A codeset having function-code combinations is provisioned on a controlling device to control functions of an intended target device. Input is provided to the controlling device which designates a function to be controlled on the intended target device. From a plurality of codes that are each associated with the designated function in a database stored in a memory of the controlling device a first code that is determined to be valid for use in controlling the designated function on the intended target device is selected. When the codeset is then provisioned on the controlling device, the provisioned codeset includes as a function-code combination thereof the designated function and the first code.
Abstract:
Embodiments of the invention are generally directed to systems, methods, and apparatuses for time-multiplexed dynamic on-die termination. In an embodiment, an integrated circuit receives, during a first clock, an on-die termination (ODT) activation signal at its ODT pin. The integrated circuit also receives, during a second clock, an ODT value selection signal on its ODT pin. In an embodiment, the integrated circuit prevents a reset of the state of the ODT activation signal for a predetermined period of time to enable the multiplexing of signals on the ODT pin. Other embodiments are described and claimed.
Abstract:
Embodiments of the invention are generally directed to systems, methods, and apparatuses for dynamic on-die termination launch latency reduction. In some embodiments, an integrated circuit includes an input/output (I/O) circuit to receive a command and a termination resistance circuit to provide a termination resistance for the I/O circuit. The integrated circuit may further include control logic to establish an initial termination resistance during a preamble associated with the command. Other embodiments are described and claimed.
Abstract:
In one embodiment a memory controller is provided. The memory controller comprises a predictive logic circuit to predict an increase in a current operating temperature of a memory device coupled to the memory controller, based on memory cycles to be issued to the memory device; and a temperature control circuit to perform a temperature control operation wherein if the sum of the current operating temperature and the predicted increase in temperature is greater than a threshold temperature associated with the memory device, then the number of memory cycles issued to the memory device is reduced.
Abstract:
A memory subsystem includes an adaptive output voltage to provide a voltage based on a power profile of a memory device of the memory subsystem. A charge pump increases the voltage to a level needed to write data to the memory device. The voltage provided is based on the power profile of the memory device, which indicates a voltage level that provides good efficiency for the charge pump, and is within maximum levels for the memory device. The voltage can be higher than a nominal voltage indicated for the memory device in a specification.
Abstract:
A memory subsystem has multiple memory devices coupled to a command/address line and an error alert line, the error alert line delay-compensated to provide deterministic alert signal timing. The command/address line and the error alert line are connected between the memory devices and a memory controller that manages the memory devices. The command/address line is driven by the memory controller, and the error alert line is driven by the memory devices.
Abstract:
A system, device, and method for designating a first rank among a plurality of memory ranks of a Memory Module as a primary rank and a second one or more ranks as secondary ranks, triggering, via hardware logic internal to the Memory Module coupled with the plurality of memory ranks, a refresh of the primary rank at a first time (e.g., Time1), and triggering a non overlapping staggered refresh of each of the secondary ranks at a second one or more times (e.g., Time2 through Timen) corresponding to each of the respective memory ranks designated as the secondary ranks.