发明申请
- 专利标题: SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES
- 专利标题(中): 半导体器件和制造半导体器件的方法
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申请号: US14155649申请日: 2014-01-15
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公开(公告)号: US20140197542A1公开(公告)日: 2014-07-17
- 发明人: Jang-Gn Yun , Hongsoo Kim , Aaron Park , Hoosung Cho
- 申请人: Jang-Gn Yun , Hongsoo Kim , Aaron Park , Hoosung Cho
- 优先权: KR10-2013-0005403 20130117
- 主分类号: H01L23/528
- IPC分类号: H01L23/528
摘要:
Semiconductor devices are provided. A semiconductor device may include a substrate and a plurality of lines on the substrate. The semiconductor device may include a dielectric layer on the substrate and adjacent the plurality of lines. The semiconductor device may include a connection element in the dielectric layer. In some embodiments, the semiconductor device may include a plurality of contacts on the connection element, and a conductive interconnection on one of the plurality of contacts that are on the connection element and on a contact that is spaced apart from the connection element.