发明申请
- 专利标题: Semiconductor Test Structures
- 专利标题(中): 半导体测试结构
-
申请号: US14246529申请日: 2014-04-07
-
公开(公告)号: US20140203282A1公开(公告)日: 2014-07-24
- 发明人: An-Chun Tu , Chen-Ming Huang , Chih-Jen Wu , Chin-Hsiang Lin
- 申请人: An-Chun Tu , Chen-Ming Huang , Chih-Jen Wu , Chin-Hsiang Lin
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: G01R31/26
- IPC分类号: G01R31/26
摘要:
A method performed using a resistive device, where the resistive device includes a substrate with an active region separated from a gate electrode by a dielectric and electrical contacts along a longest dimension of the gate electrode, the method comprising, performing one or more processes to form the resistive device, measuring a resistance between the electrical contacts, and correlating the measured resistance with a variation in one or more of the processes.
公开/授权文献
- US09250286B2 Semiconductor test structures 公开/授权日:2016-02-02
信息查询