发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US14239375申请日： 2012-07-31
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公开(公告)号： US20140203393A1公开(公告)日： 2014-07-24
- 发明人: Tsuyoshi Kawakami , Yoshiyuki Nakaki , Yoshio Fujii , Hiroshi Watanabe , Shuhei Nakata , Kohei Ebihara , Akihiko Furukawa
- 申请人： Tsuyoshi Kawakami , Yoshiyuki Nakaki , Yoshio Fujii , Hiroshi Watanabe , Shuhei Nakata , Kohei Ebihara , Akihiko Furukawa
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-211980 20110928
- 国际申请： PCT/JP2012/069407 WO 20120731
- 主分类号： H01L29/872
- IPC分类号： H01L29/872
摘要：
A semiconductor device having high breakdown voltage and high reliability without forming an embedded injection layer with high position accuracy. The semiconductor device includes a base as an active area of a second conductivity type formed on a surface layer of a semiconductor layer of a first conductivity type to constitute a semiconductor element; guard rings as a plurality of first impurity regions of the second conductivity type formed on the surface layer of the semiconductor layer spaced apart from each other to respectively surround the base in plan view; and an embedded injection layer as a second impurity region of the second conductivity type embedded in the surface layer of the semiconductor layer to connect at least two bottom portions of the plurality of guard rings.
公开/授权文献
- US09202940B2 Semiconductor device 公开/授权日：2015-12-01
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