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公开(公告)号：US09202940B2
公开(公告)日：2015-12-01
申请号：US14239375
申请日：2012-07-31
申请人： Tsuyoshi Kawakami , Yoshiyuki Nakaki , Yoshio Fujii , Hiroshi Watanabe , Shuhei Nakata , Kohei Ebihara , Akihiko Furukawa
发明人： Tsuyoshi Kawakami , Yoshiyuki Nakaki , Yoshio Fujii , Hiroshi Watanabe , Shuhei Nakata , Kohei Ebihara , Akihiko Furukawa
IPC分类号： H01L29/06 , H01L29/872 , H01L29/861 , H01L29/16
CPC分类号： H01L29/8725 , H01L29/0619 , H01L29/0623 , H01L29/1608 , H01L29/8611 , H01L29/872
摘要： A semiconductor device having high breakdown voltage and high reliability without forming an embedded injection layer with high position accuracy. The semiconductor device includes a base as an active area of a second conductivity type formed on a surface layer of a semiconductor layer of a first conductivity type to constitute a semiconductor element; guard rings as a plurality of first impurity regions of the second conductivity type formed on the surface layer of the semiconductor layer spaced apart from each other to respectively surround the base in plan view; and an embedded injection layer as a second impurity region of the second conductivity type embedded in the surface layer of the semiconductor layer to connect at least two bottom portions of the plurality of guard rings.
摘要翻译： 具有高击穿电压和高可靠性的半导体器件，而不形成具有高定位精度的嵌入式注入层。 半导体器件包括形成在第一导电类型的半导体层的表面层上的第二导电类型的有源区的基底，以构成半导体元件; 保护环作为多个第一导电类型的第一杂质区域，形成在半导体层的表面层上彼此间隔开以在平面图中分别包围基底; 以及作为第二导电类型的第二杂质区域的嵌入式注入层，其嵌入在半导体层的表面层中，以连接多个保护环的至少两个底部。
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公开(公告)号：US20140203393A1
公开(公告)日：2014-07-24
申请号：US14239375
申请日：2012-07-31
申请人： Tsuyoshi Kawakami , Yoshiyuki Nakaki , Yoshio Fujii , Hiroshi Watanabe , Shuhei Nakata , Kohei Ebihara , Akihiko Furukawa
发明人： Tsuyoshi Kawakami , Yoshiyuki Nakaki , Yoshio Fujii , Hiroshi Watanabe , Shuhei Nakata , Kohei Ebihara , Akihiko Furukawa
IPC分类号： H01L29/872
CPC分类号： H01L29/8725 , H01L29/0619 , H01L29/0623 , H01L29/1608 , H01L29/8611 , H01L29/872
摘要： A semiconductor device having high breakdown voltage and high reliability without forming an embedded injection layer with high position accuracy. The semiconductor device includes a base as an active area of a second conductivity type formed on a surface layer of a semiconductor layer of a first conductivity type to constitute a semiconductor element; guard rings as a plurality of first impurity regions of the second conductivity type formed on the surface layer of the semiconductor layer spaced apart from each other to respectively surround the base in plan view; and an embedded injection layer as a second impurity region of the second conductivity type embedded in the surface layer of the semiconductor layer to connect at least two bottom portions of the plurality of guard rings.
摘要翻译： 具有高击穿电压和高可靠性的半导体器件，而不形成具有高定位精度的嵌入式注入层。 半导体器件包括形成在第一导电类型的半导体层的表面层上的第二导电类型的有源区的基底，以构成半导体元件; 保护环作为多个第一导电类型的第一杂质区域，形成在半导体层的表面层上彼此间隔开以在平面图中分别包围基底; 以及作为第二导电类型的第二杂质区域的嵌入式注入层，其嵌入在半导体层的表面层中，以连接多个保护环的至少两个底部。
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3.发明授权公开(公告)号：US09536942B2
公开(公告)日：2017-01-03
申请号：US14363914
申请日：2012-08-02
IPC分类号： H01L21/266 , H01L29/78 , H01L29/872 , H01L29/06 , H01L29/861 , H01L29/66 , H01L29/08 , H01L29/16 , H01L29/423
CPC分类号： H01L29/063 , H01L21/266 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/0692 , H01L29/0847 , H01L29/1608 , H01L29/42368 , H01L29/66136 , H01L29/66143 , H01L29/66659 , H01L29/7835 , H01L29/8611 , H01L29/872
摘要： A semiconductor device includes an active region formed in an upper layer portion of a semiconductor layer of a first conductivity type, and a plurality of electric field relaxation layers disposed from an edge of the active region toward the outside so as to surround the active region. The plurality of electric field relaxation layers include a plurality of first electric field relaxation layers and a plurality of second electric field relaxation layers alternately disposed adjacent to each other, the first electric field relaxation layer and the second electric field relaxation layer adjacent to each other forming a set. Impurities of a second conductivity type are implanted to the first electric field relaxation layers at a first surface density, widths of which becoming smaller as apart from the active region. Impurities of the second conductivity type are implanted to the second electric field relaxation layers at a second surface density lower than the first surface density, widths of which becoming larger as apart from the active region.
摘要翻译： 半导体器件包括形成在第一导电类型的半导体层的上层部分中的有源区和从有源区的边缘朝向外部设置以围绕有源区的多个电场弛豫层。 多个电场弛豫层包括彼此相邻交替设置的多个第一电场弛豫层和多个第二电场弛豫层，第一电场弛豫层和彼此相邻的第二电场弛豫层形成 一套。 第二导电类型的杂质以第一表面密度注入第一电场弛豫层，其宽度随着活性区域的变小而变小。 第二导电类型的杂质以比第一表面密度低的第二表面密度注入第二电场弛豫层，其宽度随着活性区域的变大而变大。
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公开(公告)号：US20140353678A1
公开(公告)日：2014-12-04
申请号：US14363914
申请日：2012-08-02
IPC分类号： H01L29/06 , H01L29/66 , H01L29/861 , H01L29/78 , H01L21/266 , H01L29/872
CPC分类号： H01L29/063 , H01L21/266 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/0692 , H01L29/0847 , H01L29/1608 , H01L29/42368 , H01L29/66136 , H01L29/66143 , H01L29/66659 , H01L29/7835 , H01L29/8611 , H01L29/872
摘要： A semiconductor device includes an active region formed in an upper layer portion of a semiconductor layer of a first conductivity type, and a plurality of electric field relaxation layers disposed from an edge of the active region toward the outside so as to surround the active region. The plurality of electric field relaxation layers include a plurality of first electric field relaxation layers and a plurality of second electric field relaxation layers alternately disposed adjacent to each other, the first electric field relaxation layer and the second electric field relaxation layer adjacent to each other forming a set. Impurities of a second conductivity type are implanted to the first electric field relaxation layers at a first surface density, widths of which becoming smaller as apart from the active region. Impurities of the second conductivity type are implanted to the second electric field relaxation layers at a second surface density lower than the first surface density, widths of which becoming larger as apart from the active region.
摘要翻译： 半导体器件包括形成在第一导电类型的半导体层的上层部分中的有源区和从有源区的边缘朝向外部设置以围绕有源区的多个电场弛豫层。 多个电场弛豫层包括彼此相邻交替设置的多个第一电场弛豫层和多个第二电场弛豫层，第一电场弛豫层和彼此相邻的第二电场弛豫层形成 一套。 第二导电类型的杂质以第一表面密度注入第一电场弛豫层，其宽度随着活性区域的变小而变小。 第二导电类型的杂质以比第一表面密度低的第二表面密度注入第二电场弛豫层，其宽度随着活性区域的变大而变大。
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公开(公告)号：US4304140A
公开(公告)日：1981-12-08
申请号：US092511
申请日：1979-11-08
申请人： Kohei Ebihara
发明人： Kohei Ebihara
CPC分类号： F02N15/06 , F02N15/023 , Y10T74/131 , Y10T74/132
摘要： A starter including a one-way clutch threadably connected to an output shaft of an electric motor and having an inner member, and a hollow pinion shaft having a pinion secured thereto and loosely fitted at its forward end portion in the inner member of the one-way clutch in such a manner that there is a slight clearance between the inner periphery of the inner member and the outer periphery of the hollow pinion shaft in connecting the inner member to the hollow pinion shaft. By this arrangement, the reaction produced by the pinion when the starter is actuated to start an engine is prevented from being directly transmitted to the inner member of the clutch to thereby inhibit an eccentric motion of the inner member of the clutch.
摘要翻译： 一种起动器，包括：单向离合器，其与电动机的输出轴螺纹连接并具有内部构件;以及中空小齿轮轴，其具有固定到其上的小齿轮，并且在其一端的内部构件的前端部处松动地配合， 在内部构件与中空小齿轮轴连接时，内部构件的内周与中空小齿轮轴的外周之间存在微小的间隙。 通过这种布置，防止起动器启动起动发动机时由小齿轮产生的反作用力直接传递到离合器的内部构件，从而抑制离合器的内部构件的偏心运动。
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公开(公告)号：US4502429A
公开(公告)日：1985-03-05
申请号：US433262
申请日：1982-10-07
申请人： Kohei Ebihara
发明人： Kohei Ebihara
CPC分类号： F02N11/00 , F02N15/023 , F02N15/066 , F02N5/04 , Y10T74/131
摘要： An inertia starter for an internal combustion engine comprises a driving shaft driven by a DC motor and provided with a one-way clutch which includes an axially movable driving member rotating and axially moving as the driving shaft is rotated and a driven member driven by the driving member to be axially displaced together with the driving member, a pinion secured to the driven member, an engine ring gear adapted to removably engage with the pinion, a return spring for returning the one-way clutch together with the pinion to the original position, a rotatable holder plate provided on the one-way clutch, and an electromagnet mounted on a stationary portion in opposition to the holder plate with a predetermined distance therefrom. The electromagnet has a coil connected in parallel with the field winding of the DC motor or with a part of the armature winding thereof.
摘要翻译： 用于内燃机的惯性起动器包括由直流电动机驱动的驱动轴，其具有单向离合器，该单向离合器包括随着驱动轴旋转而旋转并轴向移动的可轴向移动的驱动构件和由驱动驱动的从动构件 构件与驱动构件一起轴向移位，固定到从动构件的小齿轮，适于与小齿轮可拆卸地接合的发动机环形齿轮;用于将单向离合器与小齿轮一起返回到初始位置的复位弹簧， 设置在单向离合器上的可旋转的保持板，以及与保持板相对的固定部分上安装有预定距离的电磁体。 电磁体具有与直流电动机的励磁绕组并联的线圈或其电枢绕组的一部分。
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公开(公告)号：US4488054A
公开(公告)日：1984-12-11
申请号：US484274
申请日：1983-04-12
申请人： Kohei Ebihara
发明人： Kohei Ebihara
CPC分类号： F02N15/06 , Y10T74/13 , Y10T74/132
摘要： A starter apparatus comprises a D.C. motor, a solenoid actuator, a hollow sleeve having at one end thereof a pinion and a one way clutch. A torque of an armature of the D.C. motor is transmitted through the one way clutch to the hollow sleeve and further transmitted to a ring gear of an engine, which is engaged with a pinion of the hollow sleeve, thereby performing a start up of the engine. The engagement or disengagement between the pinion and the ring gear is carried out by means that the solenoid actuator reciprocates only the hollow sleeve through a shift lever.
摘要翻译： 启动器装置包括直流电动机，螺线管致动器，中空套管，其一端具有小齿轮和单向离合器。 直流电动机的电枢的扭矩通过单向离合器传递到中空套筒，并进一步传递到与中空套筒的小齿轮接合的发动机的齿圈，从而执行发动机的启动 。 小齿轮和环形齿轮之间的接合或分离通过螺线管致动器仅使中空套筒通过换档杆往复运动而进行。
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