发明申请
- 专利标题： I-Layer Vanadium-Doped Pin Type Nuclear Battery and the Preparation Process Thereof
- 专利标题（中）： I层钒掺杂针型核电池及其制备方法
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申请号： US14349933申请日： 2012-05-31
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公开(公告)号： US20140225472A1公开(公告)日： 2014-08-14
- 发明人: Hui Guo , Keji Zhang , Yuming Zhang , Yujuan Zhang , Chao Han , Yanqiang Shi
- 申请人： Hui Guo , Keji Zhang , Yuming Zhang , Yujuan Zhang , Chao Han , Yanqiang Shi
- 申请人地址： CN Xi'an City
- 专利权人： Xidian University
- 当前专利权人： Xidian University
- 当前专利权人地址： CN Xi'an City
- 优先权： CN201110319001.9 20111019
- 国际申请： PCT/CN2012/076325 WO 20120531
- 主分类号： G21H1/06
- IPC分类号： G21H1/06 ; H01L21/02
摘要：
A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(1), a p-type ohm contact electrode(4), a SiO2 passivation layer(2), a SiO2 compact insulation layer(3), a p-type SiC epitaxial layer(5), an n-type SiC epitaxial layer(6), an n-type SiC substrate(7) and an n-type ohm contact electrode(8). The doping density of the p-type SiC epitaxial layer(5) is 1×1019 to 5×1019 cm3, the doping density of the n-type SiC substrate(7) is 1×1018 to 7×1018 cm3. The n-type SiC epitaxial layer(6) is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1×1013 to 5×1014 cm3. Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high.
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