公开(公告)号：US20140225472A1

公开(公告)日：2014-08-14

申请号：US14349933

申请日：2012-05-31

申请人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Yujuan Zhang ,  Chao Han ,  Yanqiang Shi

发明人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Yujuan Zhang ,  Chao Han ,  Yanqiang Shi

IPC分类号： G21H1/06 ,  H01L21/02

CPC分类号： G21H1/06 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/046 ,  H01L21/0495 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/36 ,  H01L29/6606 ,  H01L29/861 ,  H01L29/868

摘要： A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(1), a p-type ohm contact electrode(4), a SiO2 passivation layer(2), a SiO2 compact insulation layer(3), a p-type SiC epitaxial layer(5), an n-type SiC epitaxial layer(6), an n-type SiC substrate(7) and an n-type ohm contact electrode(8). The doping density of the p-type SiC epitaxial layer(5) is 1×1019 to 5×1019 cm3, the doping density of the n-type SiC substrate(7) is 1×1018 to 7×1018 cm3. The n-type SiC epitaxial layer(6) is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1×1013 to 5×1014 cm3. Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high.

摘要翻译： 第一层钒掺杂PIN型核电池，包括从顶部到底部的放射性同位素源层（1），p型欧姆接触电极（4），SiO 2钝化层（2），SiO 2密实绝缘层 3），p型SiC外延层（5），n型SiC外延层（6），n型SiC衬底（7）和n型欧姆接触电极（8）。 p型SiC外延层（5）的掺杂密度为1×1019〜5×1019 cm3，n型SiC基板（7）的掺杂密度为1×1018〜7×1018 cm3。 n型SiC外延层（6）是通过注入钒离子而形成的低掺杂层I，其掺杂密度为1×1013〜5×1014cm3。 还提供了I型钒掺杂PIN型核电池的制备方法。 本发明解决了现有的SiC PIN型核电池的层I的掺杂浓度高的问题。

公开(公告)号：US09728292B2

公开(公告)日：2017-08-08

申请号：US14349933

申请日：2012-05-31

申请人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Yujuan Zhang ,  Chao Han ,  Yanqiang Shi

发明人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Yujuan Zhang ,  Chao Han ,  Yanqiang Shi

IPC分类号： G21H1/06 ,  H01L29/868 ,  H01L21/04 ,  H01L29/66 ,  H01L29/36 ,  H01L29/861 ,  H01L29/16 ,  H01L29/167 ,  H01L21/02

CPC分类号： G21H1/06 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/046 ,  H01L21/0495 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/36 ,  H01L29/6606 ,  H01L29/861 ,  H01L29/868

摘要： A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(1), a p-type ohm contact electrode(4), a SiO2 passivation layer(2), a SiO2 compact insulation layer(3), a p-type SiC epitaxial layer(5), an n-type SiC epitaxial layer(6), an n-type SiC substrate(7) and an n-type ohm contact electrode(8). The doping density of the p-type SiC epitaxial layer(5) is 1×1019 to 5×1019 cm−3, the doping density of the n-type SiC substrate(7) is 1×1018 to 7×1018 cm−3. The n-type SiC epitaxial layer(6) is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1×1013 to 5×1014 cm−3. Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high.

公开(公告)号：US09048092B2

公开(公告)日：2015-06-02

申请号：US14350282

申请日：2012-09-03

申请人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Pengfei Deng ,  Tianmin Lei

发明人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Pengfei Deng ,  Tianmin Lei

IPC分类号： H01L21/44 ,  H01L21/02 ,  C23C16/26 ,  C01B31/04 ,  C23C16/02 ,  C23C16/56 ,  B82Y30/00 ,  B82Y40/00

CPC分类号： H01L21/02527 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B2204/32 ,  C23C16/0218 ,  C23C16/0272 ,  C23C16/26 ,  C23C16/56 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02381 ,  H01L21/0262 ,  H01L21/02664

摘要： A method for preparing graphene by reaction with Cl2 based on annealing with assistant metal film is provided, comprising the following steps: applying normal wash to a Si-substrate, then putting the Si-substrate into a reaction chamber of a CVD system and evacuating, rising the temperature to 950° C.-1150° C. gradually, supplying C3H8 and carbonizing the Si-substrate for 3-10 min; rising the temperature to 1150° C.-1350° C. rapidly, supplying C3H8 and SiH4, growing a 3C—SiC hetero-epitaxial film on the carbonized layer, and then reducing the temperature to ambient temperature under the protection of H2 gradually, introducing the grown sample wafer of 3C—SiC into a quartz tube, heating to 700-1100° C., supplying mixed gas of Ar and Cl2, and reacting Cl2 with 3C—SiC to generate a carbon film, applying the sample wafer of carbon film on a metal film, annealing at 900° C.-1100° C. for 10-30 min to reconstruct the carbon film into graphene; and taking out of the metal film from the sample wafer of graphene to obtain large area graphene. The graphene obtained by the method has large area, smooth surface, good continuity, and low porosity; and the product can be used to seal gas and liquid.

摘要翻译： 提供了一种基于与辅助金属膜退火的与Cl2反应制备石墨烯的方法，包括以下步骤：对Si衬底进行常规洗涤，然后将Si衬底放入CVD系统的反应室中并排空， 逐渐升温至950℃-1150℃，供给C3H8，并将Si衬底碳化3-10分钟; 将温度迅速升高至1150℃-1350℃，供应C3H8和SiH4，在碳化层上生长3C-SiC异质外延膜，然后在H2的保护下将温度降至环境温度，引入 将生长的3C-SiC的样品晶片加入石英管中，加热至700-1100℃，供应Ar和Cl2的混合气体，并使Cl2与3C-SiC反应以产生碳膜，涂覆碳膜样品晶片 在金属膜上，在900℃-1100℃退火10-30分钟以将碳膜重构成石墨烯; 并从石墨烯的样品晶片中取出金属膜，以获得大面积的石墨烯。 该方法获得的石墨烯面积大，表面光滑，连续性好，孔隙率低; 该产品可用于密封气体和液体。

公开(公告)号：US20140367642A1

公开(公告)日：2014-12-18

申请号：US14369780

申请日：2012-09-03

申请人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Pengfei Deng ,  Tianmin Lei

发明人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Pengfei Deng ,  Tianmin Lei

IPC分类号： H01L21/02 ,  H01L29/16

CPC分类号： H01L21/02614 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B2204/04 ,  C23C14/0605 ,  C23C16/01 ,  C23C16/0281 ,  C23C16/26 ,  C30B25/02 ,  H01L21/02378 ,  H01L21/02527 ,  H01L21/02661 ,  H01L21/02664 ,  H01L29/1606

摘要： Provided is a process for preparing graphene on a SiC substrate, based on metal film-assisted annealing, comprising the following steps: subjecting a SiC substrate to a standard cleaning process; placing the cleaned SiC substrate into a quartz tube and heating the quartz tube up to a temperature of 750 to 1150° C.; introducing CCl4vapor into the quartz tube to react with SiC for a period of 20 to 100 minutes so as to generate a double-layered carbon film, wherein the CCl4 vapor is carried by Ar gas; forming a metal film with a thickness of 350 to 600 nm on a Si substrate by electron beam deposition; placing the obtained double-layered carbon film sample onto the metal film; subsequently annealing them in an Ar atmosphere at a temperature of 900 to 1100° C. for 10-30 minutes so as to reconstitute the double-layered carbon film into double-layered graphene; and removing the metal film from the double-layered graphene, thereby obtaining double-layered graphene. Also provided is double-layered graphene prepared by said process.

摘要翻译： 提供了一种基于金属膜辅助退火在SiC衬底上制备石墨烯的方法，包括以下步骤：使SiC衬底进行标准清洁工艺; 将清洁的SiC衬底放置在石英管中并将石英管加热至750至1150℃的温度; 将CCl 4蒸气引入石英管中与SiC反应20至100分钟，以产生双重碳膜，其中CCl 4蒸气由Ar气携带; 通过电子束沉积在Si衬底上形成厚度为350-600nm的金属膜; 将获得的双层碳膜样品放置在金属膜上; 然后在Ar气氛中在900〜1100℃的温度下退火10-30分钟，以将双层碳膜重新构成双层石墨烯; 并从双层石墨烯中除去金属膜，从而获得双层石墨烯。 还提供了通过所述方法制备的双层石墨烯。

公开(公告)号：US09691612B2

公开(公告)日：2017-06-27

申请号：US14369780

申请日：2012-09-03

申请人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Pengfei Deng ,  Tianmin Lei

发明人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Pengfei Deng ,  Tianmin Lei

IPC分类号： H01L21/02 ,  C23C16/26 ,  C23C16/01 ,  C23C16/02 ,  C01B31/04 ,  B82Y30/00 ,  B82Y40/00 ,  H01L29/16 ,  C30B25/02 ,  C23C14/06

CPC分类号： H01L21/02614 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B2204/04 ,  C23C14/0605 ,  C23C16/01 ,  C23C16/0281 ,  C23C16/26 ,  C30B25/02 ,  H01L21/02378 ,  H01L21/02527 ,  H01L21/02661 ,  H01L21/02664 ,  H01L29/1606

摘要： Provided is a process for preparing graphene on a SiC substrate, based on metal film-assisted annealing, comprising the following steps: subjecting a SiC substrate to a standard cleaning process; placing the cleaned SiC substrate into a quartz tube and heating the quartz tube up to a temperature of 750 to 1150° C.; introducing CCl4vapor into the quartz tube to react with SiC for a period of 20 to 100 minutes so as to generate a double-layered carbon film, wherein the CCl4 vapor is carried by Ar gas; forming a metal film with a thickness of 350 to 600 nm on a Si substrate by electron beam deposition; placing the obtained double-layered carbon film sample onto the metal film; subsequently annealing them in an Ar atmosphere at a temperature of 900 to 1100° C. for 10-30 minutes so as to reconstitute the double-layered carbon film into double-layered graphene; and removing the metal film from the double-layered graphene, thereby obtaining double-layered graphene. Also provided is double-layered graphene prepared by said process.

公开(公告)号：US20140256120A1

公开(公告)日：2014-09-11

申请号：US14350282

申请日：2012-09-03

申请人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Penfgei Deng ,  Tianmin Lei

发明人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Penfgei Deng ,  Tianmin Lei

IPC分类号： H01L21/02

CPC分类号： H01L21/02527 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B2204/32 ,  C23C16/0218 ,  C23C16/0272 ,  C23C16/26 ,  C23C16/56 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02381 ,  H01L21/0262 ,  H01L21/02664

摘要： A method for preparing graphene by reaction with Cl2 based on annealing with assistant metal film is provided, comprising the following steps: applying normal wash to a Si-substrate, then putting the Si-substrate into a reaction chamber of a CVD system and evacuating, rising the temperature to 950° C. -1150° C. gradually, supplying C3H8 and carbonizing the Si-substrate for 3-10 min; rising the temperature to 1150° C.-1350° C. rapidly, supplying C3H8 and SiH4, growing a 3C—SiC hetero-epitaxial film on the carbonized layer, and then reducing the temperature to ambient temperature under the protection of H2 gradually, introducing the grown sample wafer of 3C—SiC into a quartz tube, heating to 700-1100° C., supplying mixed gas of Ar and Cl2, and reacting Cl2 with 3C—SiC to generate a carbon film, applying the sample wafer of carbon film on a metal film, annealing at 900° C.-1100° C. for 10-30 min to reconstruct the carbon film into graphene; and taking out of the metal film from the sample wafer of graphene to obtain large area graphene. The graphene obtained by the method has large area, smooth surface, good continuity, and low porosity; and the product can be used to seal gas and liquid.

摘要翻译： 提供了一种基于与辅助金属膜退火的与Cl2反应制备石墨烯的方法，包括以下步骤：对Si衬底进行常规洗涤，然后将Si衬底放入CVD系统的反应室中并排空， 逐渐升温至950°C -1150°C，供应C3H8，并将Si衬底碳化3-10分钟; 将温度迅速升高至1150℃-1350℃，供应C3H8和SiH4，在碳化层上生长3C-SiC异质外延膜，然后在H2的保护下将温度降至环境温度，引入 将生长的3C-SiC的样品晶片加入石英管中，加热至700-1100℃，供应Ar和Cl2的混合气体，并使Cl2与3C-SiC反应以产生碳膜，涂覆碳膜样品晶片 在金属膜上，在900℃-1100℃退火10-30分钟以将碳膜重构成石墨烯; 并从石墨烯的样品晶片中取出金属膜，以获得大面积的石墨烯。 该方法获得的石墨烯面积大，表面光滑，连续性好，孔隙率低; 该产品可用于密封气体和液体。

公开(公告)号：USD960430S1

公开(公告)日：2022-08-09

申请号：US29783877

申请日：2021-05-17

申请人： Hui Guo

设计人： Hui Guo

公开(公告)号：US08732205B2

公开(公告)日：2014-05-20

申请号：US13251963

申请日：2011-10-03

申请人： Hui Guo ,  Venkatachary Srinivasan ,  Surendra Sadanand Rajam ,  Zhaowei Charlie Jiang ,  Min Zhou

发明人： Hui Guo ,  Venkatachary Srinivasan ,  Surendra Sadanand Rajam ,  Zhaowei Charlie Jiang ,  Min Zhou

IPC分类号： G06F7/00 ,  G06F17/30

CPC分类号： H04L29/12801 ,  H04L29/1216 ,  H04L29/12207 ,  H04L61/157 ,  H04L61/20 ,  H04L61/6004

摘要： Embodiments of the invention are directed to determining a universal device identifier (UDID) for a client device, based on multiple service-dependent identifiers (SDIDs) used by client applications, websites, or other services to identify the client device. SDID types are prioritized with pre-assigned weights. A received SDID causes a single database read to access all other SDIDs, and any existing UDID(s) associated with the client device. A final UDID is created or selected based on the SDID weights. The database is updated in a sequence that enables self recovery of a prior UDID in case of database error during update. First, any non-selected UDID records are updated with the final UDID. Next, lower weighted SDID records are updated. The final UDID record is updated. The highest weighted SDID record is updated last, to preserve the prior UDID as long as possible in case of update error, which aborts the remaining update.

摘要翻译： 基于客户端应用程序，网站或其他服务使用的多个服务相关标识符（SDID）来确定客户端设备的通用设备标识符（UDID），本发明的实施例涉及用于识别客户端设备的通用设备标识符（UDID）。 SDID类型的优先级与预先分配的权重。 收到的SDID导致单个数据库读取访问所有其他SDID以及与客户端设备相关联的任何现有UDID。 基于SDID权重创建或选择最终的UDID。 在更新过程中数据库出现错误的情况下，数据库将按照先前UDID自恢复的顺序进行更新。 首先，使用最终的UDID更新任何未选择的UDID记录。 接下来，更新加权的SDID记录。 最后的UDID记录被更新。 最高加权的SDID记录被最后更新，以便在更新错误的情况下尽可能长地保留先前的UDID，其中止剩余的更新。

公开(公告)号：US20130161278A1

公开(公告)日：2013-06-27

申请号：US13696718

申请日：2012-04-11

申请人： Linrui Sun ,  John Lanning ,  Liangjian Li ,  Biwen Qiu ,  Hua Wan ,  Hui Guo

发明人： Linrui Sun ,  John Lanning ,  Liangjian Li ,  Biwen Qiu ,  Hua Wan ,  Hui Guo

IPC分类号： B66C23/76

CPC分类号： B66C23/76

摘要： The present invention discloses a mobile counterweight equipment of crawler crane, which includes a main platform, wherein the said mobile counterweight equipment further includes a pair of sliding rails on two sides of the main platform, slider means and counterweight equipment on the said sliding rails; the said counterweight equipment is connected to the said slider means, the said slider means slides back and forth on the said sliding rails. The beneficial effects of the present invention are: the total weight of the counterweight is greatly reduced, the structure is simplified and it is easy to operate and to maintain.

摘要翻译： 本发明公开了一种履带式起重机的移动配重设备，其包括主平台，其中所述移动配重设备还在主平台的两侧还包括在所述滑轨上的滑块装置和配重设备上的一对滑轨; 所述配重设备连接到所述滑块装置，所述滑块装置在所述滑轨上前后滑动。 本发明的有益效果是：配重的总重量大大降低，结构简化，易于操作和维护。

公开(公告)号：US20120023114A1

公开(公告)日：2012-01-26

申请号：US13251963

申请日：2011-10-03

申请人： Hui Guo ,  Venkatachary Srinivasan ,  Surendra Sadanand Rajam ,  Zhaowei Charlie Jiang ,  Min Zhou

发明人： Hui Guo ,  Venkatachary Srinivasan ,  Surendra Sadanand Rajam ,  Zhaowei Charlie Jiang ,  Min Zhou

IPC分类号： G06F17/30

CPC分类号： H04L29/12801 ,  H04L29/1216 ,  H04L29/12207 ,  H04L61/157 ,  H04L61/20 ,  H04L61/6004

摘要： Embodiments of the invention are directed to determining a universal device identifier (UDID) for a client device, based on multiple service-dependent identifiers (SDIDs) used by client applications, websites, or other services to identify the client device. SDID types are prioritized with pre-assigned weights. A received SDID causes a single database read to access all other SDIDs, and any existing UDID(s) associated with the client device. A final UDID is created or selected based on the SDID weights. The database is updated in a sequence that enables self recovery of a prior UDID in case of database error during update. First, any non-selected UDID records are updated with the final UDID. Next, lower weighted SDID records are updated. The final UDID record is updated. The highest weighted SDID record is updated last, to preserve the prior UDID as long as possible in case of update error, which aborts the remaining update.

摘要翻译： 基于客户端应用程序，网站或其他服务使用的多个服务相关标识符（SDID）来确定客户端设备的通用设备标识符（UDID），本发明的实施例涉及用于识别客户端设备的通用设备标识符（UDID）。 SDID类型的优先级与预先分配的权重。 收到的SDID导致单个数据库读取访问所有其他SDID以及与客户端设备相关联的任何现有UDID。 基于SDID权重创建或选择最终的UDID。 在更新过程中数据库出现错误的情况下，数据库将按照先前UDID自恢复的顺序进行更新。 首先，使用最终的UDID更新任何未选择的UDID记录。 接下来，更新加权的SDID记录。 最后的UDID记录被更新。 最高加权的SDID记录被最后更新，以便在更新错误的情况下尽可能长地保留先前的UDID，其中止剩余的更新。