Invention Application
US20140235005A1 METHOD OF PRODUCING P-TYPE NITRIDE SEMICONDUCTOR AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE THEREWITH
审中-公开
生产P型氮化物半导体的方法及其制造氮化物半导体发光器件的方法
- Patent Title: METHOD OF PRODUCING P-TYPE NITRIDE SEMICONDUCTOR AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE THEREWITH
- Patent Title (中): 生产P型氮化物半导体的方法及其制造氮化物半导体发光器件的方法
-
Application No.: US14106783Application Date: 2013-12-15
-
Publication No.: US20140235005A1Publication Date: 2014-08-21
- Inventor: Jong Hyun LEE , Ki Sung KIM , Bum Joon KIM , Tan Sakong , Suk Ho YOON , Jae Deok JEONG
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2013-0016313 20130215
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/02
Abstract:
A method of producing a p-type nitride semiconductor includes growing a first nitride semiconductor layer doped with a first concentration of a p-type impurity. The first nitride semiconductor layer is annealed to activate the p-type impurity. A second nitride semiconductor layer doped with a second concentration of a p-type impurity is grown on the first nitride semiconductor layer. The second concentration is higher than the first concentration.
Information query
IPC分类:
