公开(公告)号：US20150207026A1

公开(公告)日：2015-07-23

申请号：US14490438

申请日：2014-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bum Joon KIM ,  Seung Woo CHOI ,  Sung Tae KIM ,  Young Min PARK ,  Eun Deok SIM ,  Sung Pyo LEE

IPC: H01L33/00 ,  H01L33/62

CPC classification number: H01L33/0075 ,  H01L21/76251 ,  H01L21/7806 ,  H01L33/0066 ,  H01L33/0079 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A method of manufacturing a semiconductor light emitting device includes forming a light emitting structure layer including an active layer on a first substrate. A second substrate is bonded to the light emitting structure layer at a first temperature higher than room temperature. The first substrate is removed from the light emitting structure layer at a second temperature higher than room temperature. The second substrate and the light emitting structure are cooled to reach room temperature. A coefficient of thermal expansion of the second substrate is different from a coefficient of thermal expansion of the active layer.

Abstract translation: 制造半导体发光器件的方法包括在第一衬底上形成包括有源层的发光结构层。 第二衬底在高于室温的第一温度下结合到发光结构层。 在高于室温的第二温度下，将第一衬底从发光结构层去除。 将第二基板和发光结构冷却至室温。 第二基板的热膨胀系数与有源层的热膨胀系数不同。

公开(公告)号：US20130099248A1

公开(公告)日：2013-04-25

申请号：US13655250

申请日：2012-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bum Joon KIM ,  Sung Tae KIM ,  Young Sun KIM ,  Suk Ho YOON ,  Ki Sung KIM ,  Ho Chul LEE

IPC: H01L33/32

CPC classification number: H01L33/14 ,  H01L33/32

Abstract: There is provided a nitride semiconductor light emitting device including an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer disposed on the active layer. One or more current diffusion layers are disposed on a surface of the n-type nitride semiconductor layer. The current diffusion layer(s) includes a material having greater band gap energy than that of a material forming the n-type nitride semiconductor layer so as to form a two-dimensional electron gas layer at an interface with the material forming the n-type nitride semiconductor layer.

Abstract translation: 提供了包括n型氮化物半导体层，设置在n型氮化物半导体层上的有源层和设置在有源层上的p型氮化物半导体层的氮化物半导体发光器件。 一个或多个电流扩散层设置在n型氮化物半导体层的表面上。 电流扩散层包括具有比形成n型氮化物半导体层的材料更大的带隙能量的材料，以便在与形成n型氮化物半导体层的材料的界面处形成二维电子气层 氮化物半导体层。

公开(公告)号：US20130113006A1

公开(公告)日：2013-05-09

申请号：US13670129

申请日：2012-11-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hun KIM ,  Gi Bum KIM ,  Bum Joon KIM ,  Seung Wan CHAE ,  Su Hyun JO ,  Sang Yeob SONG

IPC: H01L33/60

CPC classification number: H01L33/10 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405

Abstract: A semiconductor light emitting device include an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, and a first p-type semiconductor layer disposed on the active layer. The first p-type semiconductor layer has an uneven structure formed on a surface thereof. A second p-type semiconductor layer has an impurity concentration higher than that of the first p-type semiconductor layer. The second p-type semiconductor layer is disposed on the first p-type semiconductor layer and has an uneven structure formed on a surface thereof. A reflective metal layer is formed on the second p-type semiconductor layer.

Abstract translation: 半导体发光器件包括n型半导体层，设置在n型半导体层上的有源层和设置在有源层上的第一p型半导体层。 第一p型半导体层在其表面上形成有不均匀结构。 第二p型半导体层的杂质浓度高于第一p型半导体层的杂质浓度。 第二p型半导体层设置在第一p型半导体层上，并且具有形成在其表面上的不均匀结构。 反射金属层形成在第二p型半导体层上。

公开(公告)号：US20130037801A1

公开(公告)日：2013-02-14

申请号：US13654169

申请日：2012-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Masayoshi KOIKE ,  Bum Joon KIM

IPC: H01L33/02 ,  H01L33/62

CPC classification number: H01L33/20 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A light emitting diode (LED) chip including: a substrate; and a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, sequentially deposited on the substrate, in which when a length of the substrate is L and a width of the substrate is W, L/W>10.

Abstract translation: 一种发光二极管（LED）芯片，包括：基板; 以及包括依次沉积在基板上的第一导电半导体层，有源层和第二导电半导体层的发光结构，其中当基板的长度为L且基板的宽度为W时，L / W> 10。

公开(公告)号：US20140235005A1

公开(公告)日：2014-08-21

申请号：US14106783

申请日：2013-12-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hyun LEE ,  Ki Sung KIM ,  Bum Joon KIM ,  Tan Sakong ,  Suk Ho YOON ,  Jae Deok JEONG

IPC: H01L33/00 ,  H01L21/02

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0066

Abstract: A method of producing a p-type nitride semiconductor includes growing a first nitride semiconductor layer doped with a first concentration of a p-type impurity. The first nitride semiconductor layer is annealed to activate the p-type impurity. A second nitride semiconductor layer doped with a second concentration of a p-type impurity is grown on the first nitride semiconductor layer. The second concentration is higher than the first concentration.

Abstract translation: 制造p型氮化物半导体的方法包括生长掺杂有第一浓度的p型杂质的第一氮化物半导体层。 对第一氮化物半导体层进行退火以激活p型杂质。 在第一氮化物半导体层上生长掺杂有第二浓度的p型杂质的第二氮化物半导体层。 第二浓度高于第一浓度。