Invention Application
- Patent Title: METHODS FOR FORMING ELECTROSTATIC DISCHARGE PROTECTION CLAMPS WITH INCREASED CURRENT CAPABILITIES
- Patent Title (中): 形成具有增加的电流能力的静电放电保护夹的方法
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Application No.: US14168807Application Date: 2014-01-30
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Publication No.: US20140235026A1Publication Date: 2014-08-21
- Inventor: ROUYING ZHAN , AMAURY GENDRON , CHAI EAN GILL
- Applicant: ROUYING ZHAN , AMAURY GENDRON , CHAI EAN GILL
- Main IPC: H01L21/8228
- IPC: H01L21/8228
Abstract:
Methods for forming an electrostatic discharge protection (ESD) clamps are provided. In one embodiment, the method includes forming at least one transistor having a first well region of a first conductivity type extending into a substrate. At least one transistor is formed having another well region of a second opposite conductivity type, which extends into the substrate to partially form a collector. The lateral edges of the transistor well regions are separated by a distance D, which at least partially determines a threshold voltage Vt1 of the ESD clamp. A base contact of the first conductivity type is formed in the first well region and separated from an emitter of the second conductivity type by a lateral distance Lbe. The first doping density and the lateral distance Lbe are selected to provide a parasitic base-emitter resistance Rbe in the range of 1
Public/Granted literature
- US09018071B2 Methods for forming electrostatic discharge protection clamps with increased current capabilities Public/Granted day:2015-04-28
Information query
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