发明申请
- 专利标题： CARBON NANOTUBE MEMORY CELL WITH ENHANCED CURRENT CONTROL
- 专利标题（中）： 碳纳米管存储器，具有增强的电流控制
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申请号： US13777592申请日： 2013-02-26
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公开(公告)号： US20140241052A1公开(公告)日： 2014-08-28
- 发明人: Keith W. Golke , David K. Nelson
- 申请人： HONEYWELL INTERNATIONAL INC.
- 申请人地址： US NJ Morristown
- 专利权人： HONEYWELL INTERNATIONAL INC.
- 当前专利权人： HONEYWELL INTERNATIONAL INC.
- 当前专利权人地址： US NJ Morristown
- 主分类号： G11C7/00
- IPC分类号： G11C7/00 ; G11C11/40
摘要：
A desired current through a carbon nano tube (CNT) element of a CNT memory device can be controlled by a wordline voltage, and a voltage on the CNT common node can be held constant. The common node can be constant at a source voltage if a p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) is used in the CNT memory device, or the common node can be constant at a supply voltage if an n-channel MOSFET is used in the CNT memory device
公开/授权文献
- US09165633B2 Carbon nanotube memory cell with enhanced current control 公开/授权日：2015-10-20
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